Datasheet > BAV100_15

BAV100_15

更新时间： 2024-10-27 01:22:07

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
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描述
Hermetically Sealed Glass High Voltage Switching Diodes

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中文翻译

获取价格

数据手册

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BAV100_15 数据手册

BAV100/101/102/103

Taiwan Semiconductor

CREAT BY ART

Small Signal Product

Hermetically Sealed Glass High Voltage Switching Diodes

FEATURES

- High voltage switching device

- Ideal for automated placement

- Hermetically sealed glass

- Compression bonded construction

- All external surfaces are corrosion

resistant and leads are readily solderable

- RoHS compliant

MINI MELF

MECHANICAL DATA

- Polarity: Indicated by black cathode band

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

VALUE

500

SYMBOL

P_D

UNIT

Power Dissipation

Repetitive Peak Reverse Voltage

Average Rectified Forward Current

V_RRM

250

I_F(AV)

200

Pulse Width = 1.0 s

1.0

Non-Repetitive Peak Forward

Surge Current

I_FSM

Pulse Width = 1.0 μs

4.0

^oC

Operating and Storage Temperature Range

T_J, T_STG

-65 to +200

Electrical Characteristics

PARAMETER

MIN

MAX

SYMBOL

UNIT

BAV100 I_R= 100 μA

BAV101 I_R= 100 μA

BAV102 I_R= 100 μA

BAV103 I_R= 100 μA

I_F= 100 mA

120

200

250

B_V

Breakdown Voltage

Forward Voltage

V_F

1.0

100

BAV100 V_R= 50 V

BAV101 V_R= 100 V

BAV102 V_R= 150 V

BAV103 V_R= 200 V

I_R

Peak Reverse Current

^oC/W

Thermal Resistance, Junction to Ambient

Junction Capacitance

R_θJA

C_J

350

V_R= 0 , f = 1.0 MHz

(Note)

5.0

Reverse Recovery Time

t_rr

Notes : Reverse recovery test conditions : I_F= I_R= 30 mA , I_rr= 30 mA , R_L= 100 Ω

Document Number: DS_S1501002

Version: B15

12 3 4

中文翻译

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