Datasheet > BAT754S/T1

BAT754S/T1

更新时间： 2022-01-19 08:39:00

品牌	Logo	应用领域
其他 - ETC		肖特基二极管
页数	文件大小	规格书
8页	55K
描述
DIODE SCHOTTKY

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中文翻译

获取价格

数据手册

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BAT754S/T1 数据手册

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAT754 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

Per diode

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_R

continuous reverse voltage

−

I_F

continuous forward current

200

300

600

I_FRM

I_FSM

repetitive peak forward current

non-repetitive peak forward current

t_p≤ 1 s; δ ≤ 0.5

t = 8.3 ms half sinewave;

JEDEC method

T_stg

T_j

storage temperature

−65

−

+150

125

°C

junction temperature

T_amb

operating ambient temperature

−65

+125

ELECTRICAL CHARACTERISTICS

_amb= 25 °C unless otherwise speciﬁed.

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Per diode

V_F

forward voltage

see Fig.6

I_F= 0.1 mA

−

200

260

340

420

−

µA

I_F= 1 mA

−

I_F= 10 mA

−

I_F= 30 mA

−

I_F= 100 mA

600

−

I_R

reverse current

V_R= 25 V; note 1; see Fig.7

f = 1 MHz; V_R= 1 V; see Fig.8

C_d

diode capacitance

−

Note

1. Pulse test: t_p= 300 µs; δ ≤ 0.02.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

500

UNIT

R_{th j-a}

thermal resistance from junction to

ambient

note 1

K/W

Note

1. Refer to SOT23 standard mounting conditions.

1999 Aug 05

1 234 5 6 7 8

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