Datasheet > BAT760WS

BAT760WS

更新时间： 2023-12-06 20:08:05

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	305K
描述
肖特基二极管

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中文翻译

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数据手册

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BAT760WS 数据手册

BAT760WS

Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

• Ultra high-speed switching

• Very low forward voltage

• Very small SMD plastic package

Anode

Top View

Applications

Simplified outline SOD-323 and symbol

• Ultra high-speed switching

• Protection circuits

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Reverse Voltage

V_R

I_F

Continuous Forward Current

Non-Repetitive Peak Forward Current

(t = 8.3 ms Half Sine Wave, JEDEC method)

I_FSM

Junction Temperature

T_J

125

℃

Storage Temperature Range

T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

426

Unit

Thermal Resistance Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

℃/W

Characteristics at T_a= 25℃

Parameter

Symbol

V_F

Max.

Unit

Forward Voltage

at I_F= 10 mA

at I_F= 100 mA

at I_F= 1 A

0.27

0.36

0.65

Reverse Current

at V_R= 5 V

at V_R= 8 V

I_R

µA

at V_R=15 V

Diode Capacitance

at V_R= 5 V, f = 1 MHz

C_d

1 / 3

Dated: 21/03/2022 Rev: 03

12 3

中文翻译

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