Datasheet > BAT54WS_15

BAT54WS_15

更新时间： 2022-02-26 14:32:54

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Small Signal Schottky Diode

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BAT54WS_15 数据手册

BAT54WS

Vishay Semiconductors

www.vishay.com

Small Signal Schottky Diode

FEATURES

• These diodes feature very low turn-on voltage

and fast switching

• These devices are protected by a PN junction

guard ring against excessive voltage, such as

electrostatic discharges

MECHANICAL DATA

Case: SOD-323

Weight: approx. 4.3 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

• AEC-Q101 qualified

• Base P/N-E3 - RoHS-compliant, commercial grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PARTS TABLE

INTERNAL

CONSTRUCTION

PART

ORDERING CODE

TYPE MARKING

REMARKS

BAT54WS-E3-08 or BAT54WS-E3-18

BAT54WS-HE3-08 or BAT54WS-HE3-18

BAT54WS

Single diode

Tape and reel

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

V_RRM

I_F

VALUE

UNIT

Repetitive peak reverse voltage

(1)

Forward continuous current

200

(1)

Repetitive peak forward current

I_FRM

300

(1)

Surge forward current

t_p< 1 s

I_FSM

600

(1)

Power dissipation

P_tot

150

Note

(1)

Valid provided that electrodes are kept at ambient temperature

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

R_thJA

T_j

VALUE

650

UNIT

K/W

°C

(1)

Thermal resistance junction to ambient air

Maximum junction temperature

Storage temperature range

Operating temperature range

125

T_stg

- 65 to + 150

- 55 to + 125

°C

T_op

°C

Note

(1)

Valid provided that electrodes are kept at ambient temperature

ELECTRICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

Tested with 100 μA pulses

V_R= 25 V

SYMBOL

MIN.

TYP.

MAX.

UNIT

Reverse breakdown voltage

Leakage current ⁽¹⁾

V_(BR)

I_R

μA

I_F= 0.1 mA

V_F

240

320

400

500

800

I_F= 1 mA

V_F

Forward voltage ⁽¹⁾

I_F= 10 mA

V_F

I_F= 30 mA

V_F

I_F= 100 mA

V_F

Diode capacitance

_R= 1 V, f = 1 MHz

C_D

I_F= 10 mA, I_R= 10 mA,

Reserve recovery time

t_rr

_R= 1 mA, R_L= 100 

Note

(1)

Pulse test; t_p300 μs,  < 2 %

Rev. 1.7, 25-Feb-13

Document Number: 85667

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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