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BAT54WS-E3-18 PDF预览

BAT54WS-E3-18

更新时间： 2024-11-18 22:04:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 77K
描述
DIODE SCHOTTKY 30V 200MA SOD323

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BAT54WS-E3-18 数据手册

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BAT54WS  
Vishay Semiconductors  
www.vishay.com  
Small Signal Schottky Diode  
FEATURES  
• These diodes feature very low turn-on voltage  
and fast switching  
• These devices are protected by a PN junction  
guard ring against excessive voltage, such as  
electrostatic discharges  
DESIGN SUPPORT TOOLS click logo to get started  
• AEC-Q101 qualified available  
• Base P/N-E3 - RoHS-compliant, commercial  
grade  
Models  
Available  
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: SOD-323  
Weight: approx. 4.3 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
CIRCUIT  
CONFIGURATION  
PART  
ORDERING CODE  
TYPE MARKING  
REMARKS  
BAT54WS-E3-08 or BAT54WS-E3-18  
BAT54WS-HE3-08 or BAT54WS-HE3-18  
BAT54WS  
Single  
L4  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VRRM  
IF  
IFRM  
IFSM  
VALUE  
30  
200  
300  
600  
UNIT  
V
mA  
mA  
mA  
mW  
Repetitive peak reverse voltage  
Forward continuous current  
Repetitive peak forward current  
Surge forward current  
(1)  
(1)  
(1)  
tp < 1 s  
(1)  
Power dissipation  
Ptot  
150  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
650  
125  
-65 to +150  
-55 to +125  
UNIT  
K/W  
°C  
°C  
°C  
(1)  
Thermal resistance junction to ambient air  
Maximum junction temperature  
Storage temperature range  
Operating temperature range  
Tstg  
Top  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
Tested with 100 μA pulses  
VR = 25 V  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
V
μA  
Reverse breakdown voltage  
Leakage current (1)  
V(BR)  
IR  
30  
2
IF = 0.1 mA  
IF = 1 mA  
IF = 10 mA  
IF = 30 mA  
VF  
VF  
VF  
VF  
VF  
CD  
240  
320  
400  
500  
800  
10  
mV  
mV  
mV  
mV  
mV  
pF  
Forward voltage (1)  
IF = 100 mA  
VR = 1 V, f = 1 MHz  
Diode capacitance  
IF = 10 mA, IR = 10 mA,  
Reserve recovery time  
trr  
5
ns  
i
R = 1 mA, RL = 100 Ω  
Note  
(1)  
Pulse test; tp < 300 μs, θ < 2 %  
Rev. 2.0, 01-Jun-17  
Document Number: 85667  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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