Datasheet > BAT54WS-E3-18

BAT54WS-E3-18

更新时间： 2024-02-29 17:18:41

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	77K
描述
DIODE SCHOTTKY 30V 200MA SOD323

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中文翻译

获取价格

数据手册

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BAT54WS-E3-18 数据手册

BAT54WS

Vishay Semiconductors

www.vishay.com

Small Signal Schottky Diode

FEATURES

• These diodes feature very low turn-on voltage

and fast switching

• These devices are protected by a PN junction

guard ring against excessive voltage, such as

electrostatic discharges

DESIGN SUPPORT TOOLS click logo to get started

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, commercial

grade

Models

Available

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

MECHANICAL DATA

Case: SOD-323

Weight: approx. 4.3 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

PARTS TABLE

CIRCUIT

CONFIGURATION

PART

ORDERING CODE

TYPE MARKING

REMARKS

BAT54WS-E3-08 or BAT54WS-E3-18

BAT54WS-HE3-08 or BAT54WS-HE3-18

BAT54WS

Single

Tape and reel

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

V_RRM

I_F

I_FRM

I_FSM

VALUE

200

300

600

UNIT

Repetitive peak reverse voltage

Forward continuous current

Repetitive peak forward current

Surge forward current

(1)

t_p< 1 s

(1)

Power dissipation

P_tot

150

Note

(1)

Valid provided that electrodes are kept at ambient temperature

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

R_thJA

T_j

VALUE

650

125

-65 to +150

-55 to +125

UNIT

K/W

°C

(1)

Thermal resistance junction to ambient air

Maximum junction temperature

Storage temperature range

Operating temperature range

T_stg

T_op

Note

(1)

Valid provided that electrodes are kept at ambient temperature

ELECTRICAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

Tested with 100 μA pulses

V_R= 25 V

SYMBOL

MIN.

TYP.

MAX.

UNIT

μA

Reverse breakdown voltage

Leakage current ⁽¹⁾

V_(BR)

I_R

I_F= 0.1 mA

I_F= 1 mA

I_F= 10 mA

I_F= 30 mA

V_F

C_D

240

320

400

500

800

Forward voltage ⁽¹⁾

I_F= 100 mA

V_R= 1 V, f = 1 MHz

Diode capacitance

I_F= 10 mA, I_R= 10 mA,

Reserve recovery time

t_rr

_R= 1 mA, R_L= 100 Ω

Note

(1)

Pulse test; t_p< 300 μs, θ < 2 %

Rev. 2.0, 01-Jun-17

Document Number: 85667

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与BAT54WS-E3-18相关器件

型号	品牌	获取价格	描述	数据表
BAT54WSERIES	ETC	获取价格	Schottky barrier (double) diodes
BAT54WSG	ZOWIE	获取价格	Schottky Barrier Diode Lead free product
BAT54WS-G	VISHAY	获取价格	Small Signal Schottky Diode
BAT54WS-G3-08	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, GREEN PACKAGE-2
BAT54WS-G3-18	VISHAY	获取价格	DIODE SCHOTTKY 30V 200MA SOD323
BAT54WSG-CB2-R	UTC	获取价格	SCHOTTKY BARRIER DIODES
BAT54WSH	MCC	获取价格	Tape&Reel: 3Kpcs/Reel;
BAT54WSHE3	MCC	获取价格	Tape&Reel: 3Kpcs/Reel;
BAT54WS-HE3-08	VISHAY	获取价格	DIODE SCHOTTKY 30V 200MA SOD323
BAT54WS-HE3-18	VISHAY	获取价格	DIODE SCHOTTKY 30V 200MA SOD323

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