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BAT54WS-7-F PDF预览

BAT54WS-7-F

更新时间: 2024-11-20 08:48:51
品牌 Logo 应用领域
美台 - DIODES 整流二极管肖特基二极管开关光电二极管PC
页数 文件大小 规格书
3页 116K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

BAT54WS-7-F 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PDSO-G2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:15 weeks风险等级:0.77
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:304747Samacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Small Outline Diode
Samacsys Footprint Name:SOD323Samacsys Released Date:2018-11-27 11:19:45
Is Samacsys:N其他特性:FAST SWITCHING
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.24 V
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.6 A
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.2 W
认证状态:Not Qualified最大重复峰值反向电压:30 V
最大反向恢复时间:0.005 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

BAT54WS-7-F 数据手册

 浏览型号BAT54WS-7-F的Datasheet PDF文件第2页浏览型号BAT54WS-7-F的Datasheet PDF文件第3页 
BAT54WS  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Fast Switching  
Ultra-Small Surface Mount Package  
PN Junction Guard Ring for Transient and ESD Protection  
Lead, Halogen and Antimony Free, RoHS Compliant  
"Green" Device (Notes 3 and 5)  
Case: SOD-323  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Leads: Solderable per MIL-STD-202, Method 208  
Also Available in Lead Free Plating (Matte Tin Finish annealed  
over Alloy 42 leadframe). Polarity: Cathode Band  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.004 grams (approximate)  
Top View  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
VRRM  
VRWM  
VR  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
V
RMS Reverse Voltage  
21  
V
VR(RMS)  
IO  
Average Rectified Forward Current  
Forward Continuous Current (Note 1)  
Repetitive Peak Forward Current (Note 1)  
100  
200  
300  
600  
mA  
mA  
mA  
mA  
IF  
IFRM  
IFSM  
Forward Surge Current (Note 1)  
@ t < 1.0s  
.
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 1)  
Symbol  
PD  
Value  
200  
Unit  
mW  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating and Storage Temperature Range (Note 4)  
625  
°C/W  
°C  
Rθ  
TJ, TSTG  
JA  
-65 to +150  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Reverse Breakdown Voltage (Note 2)  
30  
V
V(BR)R  
IR = 100μA  
IF = 0.1mA  
IF = 1mA  
240  
320  
Forward Voltage  
400  
500  
1000  
mV  
IF = 10mA  
IF = 30mA  
IF = 100mA  
VFM  
Reverse Leakage Current (Note 2)  
Total Capacitance  
2.0  
10  
IRM  
CT  
μA  
pF  
VR = 25V  
VR = 1.0V, f = 1.0MHz  
IF = 10mA through IR = 10mA  
to IR = 1.0mA, RL = 100Ω  
Reverse Recovery Time  
5.0  
ns  
trr  
Notes:  
1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead. Halogen and Antimony Free.  
1
RθJA  
d Ptot  
d TJ  
4.  
>
thermal runaway condition for a diode on its own heatsink.  
5. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
1 of 3  
www.diodes.com  
August 2008  
© Diodes Incorporated  
BAT54WS  
Document number: DS30098 Rev. 11 - 2  

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