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BAT54WS-G3-08 PDF预览

BAT54WS-G3-08

更新时间: 2024-11-18 20:51:55
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 86K
描述
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, GREEN PACKAGE-2

BAT54WS-G3-08 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.07
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.24 V
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.6 A
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.15 W
参考标准:AEC-Q101最大重复峰值反向电压:30 V
最大反向恢复时间:0.005 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

BAT54WS-G3-08 数据手册

 浏览型号BAT54WS-G3-08的Datasheet PDF文件第2页浏览型号BAT54WS-G3-08的Datasheet PDF文件第3页浏览型号BAT54WS-G3-08的Datasheet PDF文件第4页 
BAT54WS-G  
Vishay Semiconductors  
www.vishay.com  
Small Signal Schottky Diode  
FEATURES  
• These diodes feature very low turn-on voltage  
and fast switching  
• These devices are protected by a PN junction  
guard ring against excessive voltage, such as  
electrostatic discharges  
DESIGN SUPPORT TOOLS click logo to get started  
• AEC-Q101 qualified available  
(part number on request)  
Models  
• Base P/N-G3 - green, commercial grade  
Available  
• Material categorization: for definitions of  
compliance please see www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: SOD-323  
Weight: approx. 4.0 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
PART  
ORDERING CODE  
CIRCUIT CONFIGURATION  
TYPE MARKING  
REMARKS  
BAT54WS-G  
BAT54WS-G3-08 or BAT54WS-G3-18  
Single  
L8  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VRRM  
IF  
IFRM  
IFSM  
VALUE  
30  
200  
300  
600  
UNIT  
V
mA  
mA  
mA  
mW  
Repetitive peak reverse voltage  
Forward continuous current (1)  
Repetitive peak forward current (1)  
Surge forward current (1)  
Power dissipation (1)  
tp < 1 s  
Ptot  
150  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
650  
125  
-65 to +150  
-55 to +125  
UNIT  
K/W  
°C  
°C  
°C  
(1)  
Thermal resistance junction to ambient air  
Maximum junction temperature  
Storage temperature range  
Operating temperature range  
Tstg  
Top  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
Tested with 100 μA pulses  
VR = 25 V  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
V
μA  
Reverse breakdown voltage  
Leakage current (1)  
V(BR)  
IR  
30  
2
IF = 0.1 mA  
IF = 1 mA  
IF = 10 mA  
IF = 30 mA  
VF  
VF  
VF  
VF  
VF  
CD  
240  
320  
400  
500  
800  
10  
mV  
mV  
mV  
mV  
mV  
pF  
Forward voltage (1)  
IF = 100 mA  
VR = 1 V, f = 1 MHz  
IF = 10 mA, IR = 10 mA,  
Diode capacitance  
Reserve recovery time  
trr  
5
ns  
i
R = 1 mA, RL = 100 Ω  
Note  
(1)  
Pulse test; tp < 300 μs, θ < 2 %  
Rev. 1.3, 02-Jun-17  
Document Number: 85241  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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