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BAT54AW-Q

更新时间: 2024-11-24 11:14:11
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安世 - NEXPERIA /
页数 文件大小 规格书
8页 200K
描述
Schottky barrier diodeProduction

BAT54AW-Q 数据手册

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BAT54AW-Q  
Schottky barrier diode  
18 February 2022  
Product data sheet  
1. General description  
Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a  
very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.  
2. Features and benefits  
Low forward voltage  
Low capacitance  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
Ultra high-speed switching  
Line termination  
Voltage clamping  
Reverse polarity protection  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Per diode  
VR  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
reverse voltage  
forward voltage  
Tj = 25 °C  
-
-
-
-
30  
V
VF  
IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02;  
pulsed; Tamb = 25 °C  
800  
mV  
IR  
reverse current  
VR = 25 V; tp ≤ 300 µs; δ ≤ 0.02;  
pulsed; Tamb = 25 °C  
-
-
2
µA  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
K1  
Description  
Simplified outline  
Graphic symbol  
3
cathode (diode 1)  
cathode (diode 2)  
common anode  
2
K2  
A1; A2  
3
A1, A2  
K1  
K2  
006aaa439  
1
2
SC-70 (SOT323)  
 
 
 
 
 

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