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BAT54AL99Z PDF预览

BAT54AL99Z

更新时间: 2024-11-18 15:28:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管
页数 文件大小 规格书
2页 30K
描述
Rectifier Diode, Schottky, 2 Element, 0.2A, 30V V(RRM), Silicon, TO-236AB,

BAT54AL99Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.05配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.24 VJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:0.6 A
元件数量:2端子数量:3
最高工作温度:150 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.29 W
认证状态:Not Qualified最大重复峰值反向电压:30 V
最大反向恢复时间:0.005 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

BAT54AL99Z 数据手册

 浏览型号BAT54AL99Z的Datasheet PDF文件第2页 
BAT54/A/C/S  
Connection DiagramS  
3
3
3
BAT54A  
BAT54  
3
L4P  
1
1
1
2
2NC  
2
1
2
3
3
BAT54C  
BAT54S  
1
MARKING  
BAT54 = L4P BAT54A = L42  
BAT54C = L43 BAT54S = L44  
SOT-23  
1
2
2
Schottky Diodes  
Absolute Maximum Ratings* TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VRRM  
IF(AV)  
IFSM  
Maximum Repetitive Reverse Voltage  
Average Rectified Forward Current  
30  
V
200  
600  
mA  
mA  
Non-repetitive Peak Forward Surge Current  
Pulse width = 1.0 second  
Storage Temperature Range  
-55 to +150  
150  
C
C
°
Tstg  
TJ  
Operating Junction Temperature  
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
290  
430  
mW  
RθJA  
C/W  
°
Electrical Characteristics TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
VR  
VF  
Breakdown Voltage  
Forward Voltage  
30  
V
I = 10  
IF = 0.1 mA  
IF = 1 mA  
IF = 10 mA  
IF = 30 mA  
IF = 100 mA  
VR =25 V  
A
µ
R
240  
320  
400  
500  
1.0  
2
mV  
mV  
mV  
mV  
V
IR  
Reverse Current  
µA  
CT  
trr  
Total Capacitance  
Reverse Recovery Time  
VR = 1V, f = 1.0 MHz  
IF = IR = 10 mA, IRR = 1.0 mA,  
RL = 100Ω  
10  
5.0  
pf  
ns  
BAT54, Rev. C  
2001 Fairchild Semiconductor Corporation  

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