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BAS70X-T3P PDF预览

BAS70X-T3P

更新时间: 2024-01-25 03:51:20
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 333K
描述
Rectifier Diode,

BAS70X-T3P 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.56配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F2元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.07 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.2 W
最大重复峰值反向电压:70 V最大反向恢复时间:0.005 µs
表面贴装:YES技术:SCHOTTKY
端子形式:FLAT端子位置:DUAL
Base Number Matches:1

BAS70X-T3P 数据手册

 浏览型号BAS70X-T3P的Datasheet PDF文件第2页浏览型号BAS70X-T3P的Datasheet PDF文件第3页 
BAS70X  
Features  
• Surface Mount Package Ideally Suited for Automatic Insertion  
• PN Junction Guard Ring for Transient and ESD Protection  
• Low Turn-on Voltage  
200mW, 70Volt  
• Fast Switching  
Schottky Barrier  
Diode  
Epoxy Meets UL 94 V-0 Flammability Rating  
Halogen Free Available Upon Request By Adding Suffix "-HF"  
• Moisture Sensitivity Level 1  
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS  
Compliant. See Ordering Information)  
Maximum Ratings  
Operating Junction Temperature Range: -55°C to +125°C  
Storage Temperature Range: -55°C to +150°C  
Thermal Resistance: 500°C/WJunction to Ambient  
SOD-523  
Maximum  
Maximum DC  
Blocking  
MCC  
Part Number  
Recurrent  
Peak Reverse  
Voltage  
Maximum  
RMS Voltage  
A
B
Voltage  
C
E
BAS70X  
70V  
49V  
70V  
G
H
Cathode Mark  
D
F
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF  
IFSM  
Pd  
70mA  
Peak Forward Surge  
Current  
100mA  
200mW  
DIMENSIONS  
MM  
INCHES  
DIM  
NOTE  
Power Dissipation  
MIN MAX MIN MAX  
0.059 0.067 1.50 1.70  
0.043 0.051 1.10 1.30  
0.030 0.033 0.75 0.85  
0.001 0.003 0.01 0.07  
0.010 0.014 0.25 0.35  
0.003 0.006 0.08 0.15  
0.020 0.028 0.50 0.70  
0.020 0.031 0.51 0.77  
A
B
C
D
E
F
410mV  
tp<300μs,IF=1.0mA  
Maximum  
Forward Voltage  
VF  
1000mV  
tp<300μs,IF=15mA  
G
H
DC Reverse Current At  
Rated DC Blocking  
Voltage  
IR  
tp<300μs,VR = 50V  
100nA(Max)  
2.0pF  
Suggested Solder Pad Layout  
Maximum Junction  
Capacitance  
Measured at  
1.0MHz, VR=0.0V  
Cj  
1.1mm  
0.8mm  
Maximum Reverse  
Recovery Time  
IF=IR=10mA  
IR=1.0mA,RL=100Ω  
Trr  
5.0ns  
0.6mm  
Rev.3-2-04152019  
1/3  
MCCSEMI.COM  

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