Datasheet > BAS770WS

BAS770WS

更新时间： 2023-12-06 20:02:12

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	308K
描述
肖特基二极管

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中文翻译

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数据手册

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BAS770WS 数据手册

BAS770WS

Surface Mount Schottky Barrier Diode

Features

PINNING

• Low capacitance

DESCRIPTION

Cathode

Anode

Top View

Marking Code: "SX"

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

Value

Unit

Repetitive Peak Reverse Voltage

Continuous Forward Current

V_RRM

I_F

Surge Non-Repetitive Forward Current (tp = 10 ms)

I_FSM

200

Total Power Dissipation

Thermal Resistance Junction to Ambient ¹⁾

P_tot

℃/W

℃

R_θJA

T_J,T_stg

635

Junction and Storage Temperature Range

¹⁾FR-5 Minimum Pad.

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 10 μA

V_BR

Forward Voltage

at I_F= 1 mA

at I_F= 10 mA

V_F

0.5

Reverse Current

at V_R= 35 V

I_R

200

Diode Capacitance

at V_R= 20 V, f = 1 MHz

C_T

1 / 3

Dated : 27/08/2020 Re:01

12 3

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