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BAS70-04-G3-18 PDF预览

BAS70-04-G3-18

更新时间: 2024-11-05 15:44:43
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
3页 80K
描述
Rectifier Diode, Schottky, 2 Element, 0.2A, 70V V(RRM), Silicon, GREEN PACKAGE-3

BAS70-04-G3-18 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:GREEN PACKAGE-3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70Factory Lead Time:12 weeks
风险等级:5.08配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.41 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.6 A元件数量:2
端子数量:3最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.2 W参考标准:AEC-Q101
最大重复峰值反向电压:70 V最大反向恢复时间:0.005 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

BAS70-04-G3-18 数据手册

 浏览型号BAS70-04-G3-18的Datasheet PDF文件第2页浏览型号BAS70-04-G3-18的Datasheet PDF文件第3页 
BAS70-00-G to BAS70-06-G  
www.vishay.com  
Vishay Semiconductors  
Small Signal Schottky Diodes, Single and Dual  
FEATURES  
• These diodes feature very low turn-on voltage  
and fast switching  
• These devices are protected by a PN junction  
guard ring against excessive voltage, such as  
electrostatic discharges  
• AEC-Q101 qualified  
• Base P/N-G3 - green, commercial grade  
BAS70-00-G  
BAS70-04-G  
• Material categorization: For definitions of  
compliance please see www.vishay.com/doc?99912  
3
3
Top View  
MECHANICAL DATA  
Case: SOT-23  
1
2
1
2
Weight: approx. 8.1 mg  
BAS70-05-G  
BAS70-06-G  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
3
3
Top View  
1
2
1
2
PARTS TABLE  
PART  
ORDERING CODE  
INTERNAL CONSTRUCTION  
Single diode  
TYPE MARKING  
REMARKS  
Tape and reel  
Tape and reel  
Tape and reel  
Tape and reel  
BAS70-00-G  
BAS70-04-G  
BAS70-05-G  
BAS70-06-G  
BAS70-00-G3-08 or BAS70-00-G3-18  
BAS70-04-G3-08 or BAS70-04-G3-18  
BAS70-05-G3-08 or BAS70-05-G3-18  
BAS70-06-G3-08 or BAS70-06-G3-18  
73G  
74G  
75G  
76G  
Dual diodes serial  
Dual diodes common cathode  
Dual diodes common anode  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
70  
UNIT  
V
Repetitive peak reverse voltage  
V
RRM = VRRM = VR  
(1)  
Forward continuous current  
IF  
200  
mA  
mA  
mW  
Surge forward current (1)  
Power dissipation (1)  
tp < 1 s  
IFSM  
Ptot  
600  
200  
Note  
(1)  
Device on fiberglass substrate, see layout on next page.  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Thermal resistance junction to ambient air (1)  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
500  
UNIT  
K/W  
°C  
Junction temperature  
125  
Storage temperature range  
Operating temperature range  
Tstg  
- 65 to + 150  
- 55 to + 125  
°C  
Top  
°C  
Note  
(1)  
Device on fiberglass substrate, see layout on next page.  
Rev. 1.0, 25-Feb-13  
Document Number: 85157  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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