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BAS40W-7-F

更新时间： 2024-11-06 08:48:27
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
3页 120K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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中文翻译

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BAS40W-7-F 数据手册

 浏览型号BAS40W-7-F的Datasheet PDF文件第2页浏览型号BAS40W-7-F的Datasheet PDF文件第3页 
BAS40W /-04 /-05 /-06  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
•
Low Forward Voltage Drop  
Fast Switching  
Ultra-Small Surface Mount Package  
PN Junction Guard Ring for Transient and ESD Protection  
Lead Free/RoHS Compliant (Note 3)  
"Green" Device (Note 4 and 5)  
•
•
Case: SOT-323  
Case Material: Molded Plastic, "Green" Molding Compound,  
Note 4. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Solderable per MIL-STD-202, Method 208  
•
•
•
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
•
•
•
•
Polarity: See Diagrams Below  
Marking Information: See Page 2  
Ordering Information: See Page 2  
Weight: 0.006 grams (approximate)  
Top View  
BAS40W  
BAS40W-04  
BAS40W-05  
BAS40W-06  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
VRRM  
VRWM  
VR  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
40  
V
RMS Reverse Voltage  
28  
V
VR(RMS)  
IFM  
Forward Continuous Current (Note 1)  
200  
600  
mA  
mA  
Non-Repetitive Peak Forward Surge Current  
@ t = 1.0s  
IFSM  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Value  
200  
Unit  
mW  
Power Dissipation (Note 1)  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating Temperature Range  
625  
°C/W  
°C  
°C  
Rθ  
JA  
-55 to +125  
-65 to +150  
TJ  
TSTG  
Storage Temperature Range  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
Reverse Breakdown Voltage (Note 2)  
40  
V
V(BR)R  
⎯
IR = 10μA  
IF = 1.0mA, tp < 300μs  
IF = 40mA, tp < 300μs  
VR = 30V  
VR = 0, f = 1.0MHz  
IF = IR = 10mA,  
380  
1000  
mV  
mV  
Forward Voltage  
VF  
⎯
Leakage Current (Note 2)  
Total Capacitance  
200  
5.0  
nA  
pF  
IR  
CT  
⎯
⎯
Reverse Recovery Time  
5.0  
ns  
trr  
⎯
Irr = 0.1 x IR, RL = 100Ω  
Notes:  
1. Device mounted on FR4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
1 of 3  
www.diodes.com  
July 2008  
© Diodes Incorporated  
BAS40W /-04 /-05 /-06  
Document number: DS30114 Rev. 14 - 2  
123

中文翻译

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BAS40W-7-F 替代型号

型号 品牌 替代类型 描述 数据表
BAS40W-7 DIODES

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