Datasheet > BAS40WS

BAS40WS

更新时间： 2024-10-31 14:54:47

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	148K
描述
肖特基二极管

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中文翻译

获取价格

数据手册

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BAS40WS 数据手册

BAS40WS

Surface Mount Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

• Low forward voltage

• Fast switching

Anode

Top View

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

V_R

Value

Unit

Repetitive Peak Reverse Voltage

DC Blocking Voltage

I_F(AV)

I_FSM

T_j

Average Rectified Forward Current

Peak Forward Surge Current (at tp = 8.3 ms)

Junction Temperature

200

℃

600

150

T_stg

Storage Temperature Range

- 55 to + 150

℃

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 10 µA

Forward Voltage

at I_F= 1 mA

at I_F= 40 mA

V_F

0.38

Reverse Current

at V_R= 30 V

I_R

t_rr

200

Reverse Recovery Time

at I_F= I_R= 10 mA to I_R= 1 mA, R_L= 100 Ω

Total Capacitance

at V_R= 0 V, f = 1 MHz

C_tot

1 / 3

Dated : 06/02/2023 Rev:03

12 3

中文翻译

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