BAS40WT-04-TP

更新时间： 2024-11-25 13:05:51

品牌	Logo	应用领域
美微科 - MCC		整流二极管光电二极管
页数	文件大小	规格书
3页	180K
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中文翻译

获取价格

数据手册

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BAS40WT-04-TP 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

BAS40WT/-04/-05/-06

Micro Commercial Components

Features

xꢀ Pow Dissipation PD=200mW Tamb=25к

xꢀ Forward Current I_F=200mA

xꢀ Breakdown Voltage VBR=40V

200mW 40Volt

Plastic-Encapsulate

Diode

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Maximum Ratings

SOT-323

xꢀ Operating Temperature: -55к to +150к

xꢀ Storage Temperature: -55к to +150к

Electrical Characteristics @ 25qC Unless Otherwise Specified

Reverse Breakdown

Voltage

V_(BR)R

40V

I_R=10µA

Maximum

Instantaneous

Forward Voltage

380mV I_FM= 1mA;

1000mV I_FM= 40mA;

V_F

DIMENSIONS

INCHES

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

I_R

1uA

5pF

5nS

V_R=30Volts

DIM

MIN

.071

.045

.079

MAX

.087

.053

.087

MIN

1.80

1.15

2.00

MAX

2.20

1.35

2.20

NOTE

.026 Nominal

0.65Nominal

1.20

.30

.000

.90

.100

.30

Typical Junction

Capacitance

Measured at

1.0MHz, V_R=0V

.047

.055

.016

.004

.039

.010

.016

1.40

.40

.100

1.00

.250

.40

C_D

.012

.000

.035

.004

.012

I_F=10mA through

I_R=10mA to

I_R=1mA

Reverse Recovery

Time

T_rr

Suggested Solder

Pad Layout

0.70

0.90

1.90

0.65

www.mccsemi.com

1 of 3

Revision: A

2011/01/01

12 3

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