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BAS40-05 PDF预览

BAS40-05

更新时间: 2024-10-31 22:48:11
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管光电二极管
页数 文件大小 规格书
2页 157K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

BAS40-05 数据手册

 浏览型号BAS40-05的Datasheet PDF文件第2页 
BAS40/ -04/ -05/ -06  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
·
·
·
Low Forward Voltage Drop  
Fast Switching  
PN Junction Guard Ring for Transient and  
ESD Protection  
SOT-23  
Dim  
A
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.85  
0°  
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.80  
8°  
A
B
B
C
C
Mechanical Data  
TOP VIEW  
D
D
E
·
Case: SOT-23, Molded Plastic  
Case material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: See Diagram Below  
Weight: 0.008 grams (approx.)  
Marking Code: See Diagrams Below & Page 2  
Ordering Information: See Page 2  
G
H
E
·
G
H
K
M
·
·
J
J
L
D
K
·
·
·
·
L
M
a
All Dimensions in mm  
BAS40 Marking: K43  
BAS40-04 Marking: K44  
BAS40-05 Marking: K45  
BAS40-06 Marking: K46  
Maximum Ratings @ TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
40  
V
IFM  
Pd  
Forward Continuous Current (Note 1)  
Power Dissipation (Note 1)  
200  
350  
mA  
mW  
mA  
°C/W  
°C  
IFSM  
Forward Surge Current (Note 1)  
@ t < 1.0s  
600  
R
qJA  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating Temperature Range  
357  
Tj  
-55 to +125  
-65 to +150  
TSTG  
°C  
Storage Temperature Range  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol Min  
Typ  
Max  
Unit  
Test Condition  
V(BR)R  
40  
IR = 10mA  
Reverse Breakdown Voltage (Note 2)  
V
tp < 300ms, IF = 1.0mA  
tp < 300ms, IF = 40mA  
380  
1000  
VF  
Forward Voltage (Note 2)  
mV  
IR  
Reverse Leakage Current (Note 2)  
Total Capacitance  
tp < 300ms, VR = 30V  
20  
200  
5.0  
nA  
pF  
VR = 0V, f =1.0MHz  
CT  
4.0  
IF = IR = 10mA to IR = 1.0mA,  
RL = 100W  
trr  
Reverse Recovery Time  
5.0  
ns  
Note:  
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website  
at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
DS11006 Rev. 12 - 2  
1 of 2  
BAS40 /-04 /-05 /-06  

BAS40-05 替代型号

型号 品牌 替代类型 描述 数据表
BAS40-05-7-F DIODES

完全替代

SURFACE MOUNT SCHOTTKY BARRIER DIODE
BAS70 DIOTEC

类似代替

Surface mount Schottky-Barrier Single-/ Double-Diodes
BAS40 DIOTEC

功能相似

Surface mount Schottky-Barrier Single-/ Double-Diodes

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