Datasheet > BAS21S-A

BAS21S-A

更新时间： 2024-02-18 06:42:39

品牌	Logo	应用领域
亞昕 - YEASHIN		/
页数	文件大小	规格书
3页	893K
描述
Switching Diode

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中文翻译

获取价格

数据手册

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BAS21S-A 数据手册

DATA SHEET

SEMICONDUCTOR

BAS21/A/C/S -A

Switching Diode

FEATURES

Fast Switching Speed

Surface Mount Package Ideally Suited for Automatic Insertion

For General Purpose Switching Applications

High Conductance

SOT-23

AEC-Q101 qualified

Base P/N

- RoHS compliant, commercial grade

Base P/N-A - RoHS compliant, AEC-Q101 qualified

BAS21A

BAS21

S21C

BAS21S

MARKING: JS

MARKING:JS2

MARKING:JS3

MARKING:JS4

JS2

JS3

JS4

Maximum Ratings @Ta=25℃

Parameter

Symbol

Limit

Unit

Repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

V_RRM

V_RWM

V_R

250

400

I_FM

Forward continuous current

Average rectified output current

I_O

200

2.5

I_FSM

I_FRM

Non-Repetitive Peak

Forward Surge Current @t=8.3ms

625

Repetitive peak forward surge current

Power dissipation

℃/W

℃

P_D

R_θJA

T_J

225

Thermal resistance junction to ambient

Junction temperature

555

150

Storage temperature range

T_STG

℃

-55~+150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test

I_R= 100µA

V_R=200V

conditions

Min

Max

0.1

Unit

Reverse breakdown voltage

Reverse voltage leakage current

250

µA

I_F=100mA

I_F=200mA

1000

1250

Forward voltage

V_F

Diode capacitance

C_D

t_rr

V_R=0V, f=1MHz

Reveres recovery time

I_F=I_R=30mA,I_rr=0.1×I_R,R_L=100Ω

http://www.yeashin.com

REV.02 20140305

12 3

中文翻译

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