5秒后页面跳转
BAS21SLT1 PDF预览

BAS21SLT1

更新时间: 2024-09-27 08:48:23
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关高压
页数 文件大小 规格书
4页 49K
描述
Dual Series High Voltage Switching Diode

BAS21SLT1 技术参数

是否无铅: 含铅生命周期:End Of Life
零件包装代码:SOT-23包装说明:TO-236, CASE 318-08, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:1 week风险等级:5.42
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e0湿度敏感等级:1
最大非重复峰值正向电流:0.625 A元件数量:2
端子数量:3最高工作温度:150 °C
最大输出电流:0.225 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240最大功率耗散:0.225 W
认证状态:Not Qualified最大重复峰值反向电压:250 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

BAS21SLT1 数据手册

 浏览型号BAS21SLT1的Datasheet PDF文件第2页浏览型号BAS21SLT1的Datasheet PDF文件第3页浏览型号BAS21SLT1的Datasheet PDF文件第4页 
BAS21SLT1  
Preferred Device  
Dual Series High Voltage  
Switching Diode  
Features  
Moisture Sensitivity Level: 1  
http://onsemi.com  
ESD Rating − Human Body Model: Class 1  
ESD Rating − Machine Model: Class B  
Pb−Free Package is Available  
ANODE  
CATHODE  
2
1
MAXIMUM RATINGS  
3
CATHODE/ANODE  
Rating  
Symbol  
Value  
250  
Unit  
Vdc  
Continuous Reverse Voltage  
Repetitive Peak Reverse Voltage  
Peak Forward Current  
V
R
V
RRM  
250  
Vdc  
MARKING DIAGRAM  
3
I
F
225  
mAdc  
mAdc  
Peak Forward Surge Current  
THERMAL CHARACTERISTICS  
Characteristic  
I
625  
FM(surge)  
JT M  
1
2
Symbol  
Max  
Unit  
SOT−23  
CASE 318  
STYLE 11  
JT = Device Code  
Total Device Dissipation FR5 Board  
(Note 1)  
P
D
225  
mW  
M
= Date Code  
T = 25°C  
A
Derate above 25°C  
1.8  
mW/°C  
°C/W  
Thermal Resistance,  
Junction to Ambient  
R
556  
q
ORDERING INFORMATION  
JA  
Device  
Package  
Shipping  
Total Device Dissipation  
P
D
300  
mW  
Alumina Substrate, (Note 2)  
BAS21SLT1  
BAS21SLT1G  
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
T = 25°C  
A
Derate above 25°C  
2.4  
mW/°C  
°C/W  
SOT−23  
(Pb−Free)  
Thermal Resistance,  
Junction to Ambient  
R
417  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Junction and Storage  
Temperature Range  
T , T  
J
55 to  
+150  
°C  
stg  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
Preferred devices are recommended choices for future use  
and best overall value.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
May, 2004 − Rev. 4  
BAS21SLT1/D  
 

BAS21SLT1 替代型号

型号 品牌 替代类型 描述 数据表
BAS21SLT1G ONSEMI

类似代替

Dual Series High Voltage Switching Diode

与BAS21SLT1相关器件

型号 品牌 获取价格 描述 数据表
BAS21SLT1/D ETC

获取价格

Dual Series High Voltage Switching Diode
BAS21SLT1D ONSEMI

获取价格

Dual Series High Voltage Switching Diode
BAS21SLT1G ONSEMI

获取价格

Dual Series High Voltage Switching Diode
BAS21SN3 CYSTEKEC

获取价格

High voltage switching (double) diodes
BAS21SP MCC

获取价格

DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC PACKAGE-3, Signal Diode
BAS21S-Q1 ANBON

获取价格

SOT-23
BAS21SRD SWST

获取价格

小信号开关二极管
BAS21SRD-AH SWST

获取价格

小信号开关二极管
BAS21SRF TSC

获取价格

225mW SMD Switching Diode
BAS21SRFG TSC

获取价格

225mW SMD Switching Diode