Datasheet > BAS21SLT1/D

BAS21SLT1/D

更新时间： 2024-09-26 23:34:31

品牌	Logo	应用领域
其他 - ETC		二极管开关高压
页数	文件大小	规格书
4页	51K
描述
Dual Series High Voltage Switching Diode

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中文翻译

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数据手册

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BAS21SLT1/D 数据手册

BAS21SLT1

Preferred Device

Dual Series High Voltage

Switching Diode

• Moisture Sensitivity Level: 1

• ESD Rating – Human Body Model: Class 1

ESD Rating – Machine Model: Class B

http://onsemi.com

MAXIMUM RATINGS

Rating

Symbol

Value

250

Unit

Vdc

ANODE

CATHODE

Continuous Reverse Voltage

Peak Forward Current

225

mAdc

CATHODE/ANODE

Peak Forward Surge Current

THERMAL CHARACTERISTICS

Characteristic

625

FM(surge)

Symbol

Max

Unit

MARKING DIAGRAM

Total Device Dissipation FR–5 Board

(Note 1.)

225

T = 25°C

Derate above 25°C

mW/°C

°C/W

JS M

1.8

Thermal Resistance,

Junction to Ambient

556

SOT–23

CASE 318

STYLE 11

JS = Device Code

Total Device Dissipation

300

= Date Code

Alumina Substrate, (Note 2.)

T = 25°C

mW/°C

Derate above 25°C

2.4

Thermal Resistance,

Junction to Ambient

417

°C/W

°C

ORDERING INFORMATION

Device

Package

Shipping

Junction and Storage

Temperature Range

T , T

–55 to

+150

stg

BAS21SLT1

SOT–23

3000/Tape & Reel

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Preferred devices are recommended choices for future use

and best overall value.

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

µAdc

(V = 200 Vdc)

(V = 200 Vdc, T = 150°C)

–

1.0

100

Reverse Breakdown Voltage

(I = 100 µAdc)

250

–

Vdc

(BR)

Forward Voltage

(I = 100 mAdc)

(I = 200 mAdc)

–

1000

1250

Diode Capacitance

(V = 0, f = 1.0 MHz)

–

5.0

Reverse Recovery Time

–

(I = I = 30 mAdc, R = 100 Ω)

1. FR–5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

February, 2001 – Rev. 1

BAS21SLT1/D

12 3 4

中文翻译

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