Datasheet > BAS21SV

BAS21SV

更新时间： 2024-06-27 12:05:48

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
5页	401K
描述
Reverse Voltage Vr : 250 V;Forward Current Io : 200 mA;Max Surge Current : 2.5 A;Forward Voltage Vf : 1.25 V;Reverse Current Ir : 0.1 uA;Recovery Time : 50 ns;Package / Case : SOT-23;Mounting Style : SMT/SMD;Certified (AEC-Q101...etc) : AEC-Q101

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BAS21SV 数据手册

BAS21V

BAS21AV

BAS21CV

BAS21SV

Switching

Diodes

FEATURES

SOT-23

Fast Switching Speed

Surface Mount Package Ideally Suited for Automatic Insertion

For General Purpose Switching Applications

High Conductance

eg:BAS21V

P/N suffix V means AEC-Q101qualified,

P/N suffix V means Halogen-free

BA6 21

BA6 21A

BA6 21C

BA6 21S

MARKING: JS

MARKING:JS2

MARKING:JS3

MARKING:JSꢀ

JS2

JS3

JS4

Solid dot = Green molding compound device,

the normal device

if none,

JS2

JS3

JS4

℃

Maximum Ratings @Ta=25

Parameter

Symbol

Limit

Unit

Repetitive peak reverse voltage

V_RRM

V_RWM

V_R

250

Working peak reverse voltage

DC blocking voltage

Forward continuous current ꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁ4ꢁ0ꢁ0ꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢁmꢁAꢁ ꢁ ꢁ

Average rectified output current

Non-Repetitive Peak

I ꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁmꢁꢁAꢁꢁꢁꢁꢁꢁꢁꢁꢁ

200

I_FSM

I²T

2.5

Forward Surge Current @t=8.3ms

Typical Current Squared Time

0.02

A S

625

Repetitive peak forward surge current ꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁꢁ

ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢁ ꢁmꢁAꢁ ꢁ ꢁ

FRM

Power dissipation

P_D

R_θJA

T_J

225

℃/W

℃

Thermal resistance junction to ambient ꢁ

Junction temperature

555

150

Storage temperature range

T_STG

℃

-55~+150

unless otherwise specified)

ELECTRICAL CHARACTERISTICS (Ta=25℃

ꢁꢁꢁꢁꢁ

Parameter

Symbol

V_(BR)

I_R

Test

I_R= 100μA

V_R=200V

conditions

Min

250

Max

Unitꢁ

Reverse breakdown voltage

Reverse voltage leakage current

0.1

μA

I_F=100mA

I_F=200mA

1000

1250

Forward voltage

V_F

Diode capacitance

C_D

t_rr

V_R=0V, f=1MHz

2020-11/02

REV:O

Reveres recovery time

I_F=I_R=30mA,I_rr=0.1×I_R,R_L=100¡

12 3 4 5

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