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BAS21/E8 PDF预览

BAS21/E8

更新时间: 2024-02-14 13:13:31
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管
页数 文件大小 规格书
2页 41K
描述
Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, TO-236AB

BAS21/E8 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.04
其他特性:FAST SWITCHING配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.001 VJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
最大非重复峰值正向电流:2.5 A元件数量:1
端子数量:3最高工作温度:150 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.25 W认证状态:Not Qualified
最大重复峰值反向电压:250 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

BAS21/E8 数据手册

 浏览型号BAS21/E8的Datasheet PDF文件第2页 
BAS19 thru BAS21  
Vishay Semiconductors  
formerly General Semiconductor  
Small-Signal Diodes  
Mounting Pad Layout  
0.031 (0.8)  
TO-236AB (SOT-23)  
0.035 (0.9)  
.122 (3.1)  
.110 (2.8)  
.016 (0.4)  
Top View  
0.079 (2.0)  
3
0.037 (0.95)  
0.037 (0.95)  
1
2
Features  
Silicon Epitaxial Planar Diode  
.037(0.95)  
.037(0.95)  
Fast switching diode in case SOT-23, especially  
suited for automatic insertion.  
These diodes are also available in other case  
styles including: the SOD-123 case with the type  
designations BAV19W to BAV21W, the Mini-MELF  
case with the type designation BAV101 to BAV103,  
the DO-35 case with the type designations BAV19  
to BAV21 and the SOD-323 case with type  
designation BAV19WS to BAV21WS.  
.102 (2.6)  
.094 (2.4)  
.016 (0.4) .016 (0.4)  
Dimensions in inches and (millimeters)  
Mechanical Data  
Case: SOT-23 Plastic Package  
Weight: approx. 0.008g  
Marking  
BAS19 = A8  
BAS20 = A81  
BAS21 = A82  
Top View  
Packaging Codes/Options:  
E8/10K per 13reel (8mm tape), 30K/box  
E9/3K per 7reel (8mm tape), 30K/box  
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
BAS19  
BAS20  
BAS21  
100  
150  
200  
Continuous Reverse Voltage  
VR  
V
BAS19  
BAS20  
BAS21  
120  
200  
250  
Repetitive Peak Reverse Voltage  
VRRM  
V
A
at t = 1µs  
at t = 1s  
2.5  
0.5  
200(1)  
200(2)  
Non-Repetitive Peak Forward Current  
IFSM  
IF(AV)  
IF  
Average Rectified Forward Current (av. over any 20ms period)  
Forward DC Current at Tamb = 25°C  
Repetitive Peak Forward Current  
mA  
mA  
mA  
mW  
°C/W  
°C  
IFRM  
Ptot  
RΘJA  
Tj  
625  
250(2)  
430(2)  
Power Dissipation up to Tamb = 25°C  
Thermal Resistance Junction to Ambient Air  
Junction Temperature  
150  
Storage Temperature Range  
TS  
65 to +150  
°C  
Notes: (1) Measured under pulse conditions; Pulse time = tp 0.3ms  
(2) Device on fiberglass substrate, see layout on next page  
Document Number 88127  
14-May-02  
www.vishay.com  
1

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