Datasheet > BAS21-13

BAS21-13

更新时间： 2024-02-02 02:05:00

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
3页	78K
描述
Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, PLASTIC PACKAGE-3

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中文翻译

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数据手册

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BAS21-13 数据手册

SPICE MODELS: BAS19 BAS20 BAS21

BAS19 / BAS20 / BAS21

SURFACE MOUNT FAST SWITCHING DIODE

Features

Fast Switching Speed

Surface Mount Package Ideally Suited for Automatic

Insertion

SOT-23

For General Purpose Switching Applications

High Conductance

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

Available in Lead Free/RoHS Compliant Version

(Note 3)

Mechanical Data

TOP VIEW

Case: SOT-23

Case Material: UL Flammability Classification Rating 94V-0

Moisture sensitivity: Level 1 per J-STD-020C

Terminals: Solderable per MIL-STD-202, Method 208

Also Available in Lead Free Plating (Matte Tin

Finish annealed over Alloy 42 leadframe). Please See

Ordering Information, Note 5, on Page 3

Polarity: See Diagram

BAS19 Marking: KA8, KT3, KT2 (See Page 3)

BAS20 Marking: KT2, KT3 (See Page 3)

BAS21 Marking: KT3 (See Page 3)

Weight: 0.008 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

BAS19

BAS20

BAS21

Unit

V_RRM

Repetitive Peak Reverse Voltage

120

200

250

V_RWM

V_R

Working Peak Reverse Voltage

DC Blocking Voltage

100

150

200

141

V_R(RMS)

I_FM

RMS Reverse Voltage

106

400

200

Forward Continuous Current (Note 1)

Average Rectified Output Current (Note 1)

I_O

2.5

0.5

Non-Repetitive Peak Forward Surge Current @ t = 1.0ms

I_FSM

@ t = 1.0s

I_FRM

P_d

Repetitive Peak Forward Surge Current (Note 1)

Power Dissipation (Note 1)

625

250

°C/W

°C

R_qJA

Thermal Resistance Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

500

T_j, T_STG

-65 to +150

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Symbol

Min

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 2)

BAS19

BAS20

BAS21

120

200

250

V_(BR)R

I_R= 100mA

1.0

1.25

I_F= 100mA

I_F= 200mA

V_F

Forward Voltage (Note 2)

T_j= 25°C

T_j= 100°C

100

I_R

C_T

t_rr

Reverse Current @ Rated DC Blocking Voltage (Note 2)

Total Capacitance

V_R= 0, f = 1.0MHz

5.0

I_F= I_R= 30mA,

I_rr= 0.1 x I_R, R_L= 100W

Reverse Recovery Time

Note:

1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website

at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead.

DS12004 Rev. 15 - 2

1 of 3

BAS19 / BAS20 / BAS21

www.diodes.com

ã Diodes Incorporated

12 3

中文翻译

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与BAS21-13相关器件

型号	品牌	获取价格	描述	数据表
BAS21-13-F	DIODES	获取价格	SURFACE MOUNT FAST SWITCHING DIODE
BAS21212	NXP	获取价格	0.2A, 250V, SILICON, SIGNAL DIODE
BAS216	TYSEMI	获取价格	Small ceramic SMD package High switching speed:max. 4 ns
BAS216	WINNERJOIN	获取价格	200mW SOD-323 SURFACE MOUNT
BAS216	KEXIN	获取价格	HIGH-SPEED SWITCHING DIODE
BAS216	LGE	获取价格	Switching Diodes
BAS216	NXP	获取价格	High-speed switching diode
BAS216,115	NXP	获取价格	0.25A, 85V, SILICON, SIGNAL DIODE, CERAMIC PACKAGE-2
BAS216,135	NXP	获取价格	0.25A, 85V, SILICON, SIGNAL DIODE, CERAMIC PACKAGE-2
BAS216/T1	ETC	获取价格	DIODE HIGH SPEED

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