5秒后页面跳转
BAS216WT PDF预览

BAS216WT

更新时间: 2024-02-16 17:59:13
品牌 Logo 应用领域
德欧泰克 - DIOTEC 二极管开关
页数 文件大小 规格书
2页 93K
描述
Fast Switching Surface Mount Si-Planar Diodes

BAS216WT 数据手册

 浏览型号BAS216WT的Datasheet PDF文件第2页 
BAS216WT  
BAS216WT  
Fast Switching Surface Mount Si-Planar Diodes  
Schnelle Si-Planar-Dioden für die Oberflächenmontage  
Version 2010-11-30  
1.2  
Power dissipation – Verlustleistung  
150 mW  
85 V  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
Plastic case – Kunststoffgehäuse  
Weight approx. – Gewicht ca.  
SOD-523  
0.01 g  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1.6  
Standard packaging taped and reeled  
Dimensions - Maße [mm]  
Standard Lieferform gegurtet auf Rolle  
Maximum ratings (TA = 25°C)  
Grenzwerte (TA = 25°C)  
BAS216WT  
Power dissipation − Verlustleistung  
Ptot  
IFAV  
150 mW 1)  
Max. average forward current – Dauergrenzstrom (dc)  
150 mA 1)  
Non repetitive peak forward surge current  
Stoßstrom-Grenzwert  
tp ≤ 1 s  
tp ≤ 1 µs  
IFSM  
IFSM  
0.5 A  
2 A  
Repetitive peak reverse voltage – Periodische Spitzensperrspannung  
VRRM  
85 V  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-55...+150°C  
-55…+150°C  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Forward voltage 2)  
IF = 1 mA  
VF  
VF  
VF  
VF  
< 715 mV  
< 855 mV  
< 1.0 V  
Durchlass-Spannung 2)  
IF = 10 mA  
IF = 50 mA  
IF = 150 mA  
< 1.25 V  
Leakage current  
Sperrstrom  
Tj = 25°C  
VR = 75 V  
IR  
< 1 µA  
Tj = 150°C VR = 25 V  
Tj = 150°C VR = 75 V  
IR  
IR  
< 30 µA  
< 50 µA  
Max. junction capacitance – Max. Sperrschichtkapazität  
VR = 0 V, f = 1 MHz  
CT  
1.5 pF  
Reverse recovery time – Sperrverzug  
trr  
< 4 ns  
IF = 10 mA über/through IR = 10 mA bis/to IR = 1 mA  
Thermal resistance junction to ambient air  
RthA  
< 620 K/W 1)  
Wärmewiderstand Sperrschicht – umgebende Luft  
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 

与BAS216WT相关器件

型号 品牌 获取价格 描述 数据表
BAS216WT-AH SWST

获取价格

小信号开关二极管
BAS21-7 DIODES

获取价格

SURFACE MOUNT FAST SWITCHING DIODE
BAS21-7-F BL Galaxy Electrical

获取价格

SURFACE MOUNT FAST SWITCHING DIODE
BAS21-7-F DIODES

获取价格

SURFACE MOUNT FAST SWITCHING DIODE
BAS21A PANJIT

获取价格

SURFACE MOUNT, HIGH VOLTAGE, DUAL SWITCHING DIODES
BAS21A BL Galaxy Electrical

获取价格

Surface mount switching diode
BAS21A LGE

获取价格

Surface Mount Switching Diode
BAS21A WEITRON

获取价格

Surface Mount Switching Diodes
BAS21A MCC

获取价格

225mW 250Volt Switching Diode
BAS21A KISEMICONDUCTOR

获取价格

SOT-23 Plastic-Encapsulate Diodes