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BAS21A

更新时间: 2024-11-19 12:51:47
品牌 Logo 应用领域
KISEMICONDUCTOR 二极管光电二极管
页数 文件大小 规格书
1页 62K
描述
SOT-23 Plastic-Encapsulate Diodes

BAS21A 数据手册

  
KI SEMICONDUCTOR CO.  
SOT-23 Plastic-Encapsulate Diodes  
BAS21_A_C_S LT1  
SWITCHING DIODE  
SOT-23  
FEATURES  
Power dissipation  
PD:  
225 mW (Tamb=25)  
Forward Current  
2. 4  
1. 3  
IF:  
Reverse Voltage  
VR:  
200 m A  
250  
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
Unit: mm  
BAS21LT1  
BAS21ALT1  
Marking: JS2  
BAS21CLT1  
Marking: JS3  
BAS21SLT1  
Marking: JS4  
Marking: JS  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)  
IR  
Test conditions  
IR= 100µA  
MIN  
MAX  
UNIT  
V
250  
Reverse breakdown voltage  
Reverse voltage leakage current  
VR=200V  
1
µA  
IF=100mA  
IF=200mA  
1000  
1250  
VF  
CD  
t r r  
mV  
pF  
nS  
Forward voltage  
VR=0V, f=1MHz  
5
Diode capacitance  
Reverse recovery time  
50  

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