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BAS21-A PDF预览

BAS21-A

更新时间: 2024-11-20 01:09:43
品牌 Logo 应用领域
亞昕 - YEASHIN /
页数 文件大小 规格书
3页 893K
描述
Switching Diode

BAS21-A 数据手册

 浏览型号BAS21-A的Datasheet PDF文件第2页浏览型号BAS21-A的Datasheet PDF文件第3页 
DATA SHEET  
SEMICONDUCTOR  
BAS21/A/C/S -A  
Switching Diode  
H
FEATURES  
z
z
z
z
ƒ
Fast Switching Speed  
Surface Mount Package Ideally Suited for Automatic Insertion  
For General Purpose Switching Applications  
High Conductance  
SOT-23  
AEC-Q101 qualified  
Base P/N  
- RoHS compliant, commercial grade  
Base P/N-A - RoHS compliant, AEC-Q101 qualified  
BAS21A  
BAS21  
S21C  
BAS21S  
MARKING: JS  
MARKING:JS2  
MARKING:JS3  
MARKING:JS4  
JS2  
JS3  
JS  
JS4  
Maximum Ratings @Ta=25  
Parameter  
Symbol  
Limit  
Unit  
Repetitive peak reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VR  
250  
400  
V
IFM  
Forward continuous current  
Average rectified output current  
mA  
mA  
A
IO  
200  
2.5  
IFSM  
IFRM  
Non-Repetitive Peak  
Forward Surge Current @t=8.3ms  
625  
Repetitive peak forward surge current  
Power dissipation  
mA  
mW  
/W  
PD  
RθJA  
TJ  
225  
Thermal resistance junction to ambient  
Junction temperature  
555  
150  
Storage temperature range  
TSTG  
-55~+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)  
IR  
Test  
IR= 100µA  
VR=200V  
conditions  
Min  
Max  
0.1  
Unit  
V
Reverse breakdown voltage  
Reverse voltage leakage current  
250  
µA  
IF=100mA  
IF=200mA  
1000  
1250  
Forward voltage  
mV  
VF  
Diode capacitance  
CD  
trr  
VR=0V, f=1MHz  
5
pF  
Reveres recovery time  
IF=IR=30mA,Irr=0.1×IR,RL=100Ω  
50  
ns  
http://www.yeashin.com  
1
REV.02 20140305  

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