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BAS125W

更新时间: 2024-09-30 06:41:27
品牌 Logo 应用领域
科信 - KEXIN 肖特基二极管
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1页 47K
描述
Silicon Schottky Diodes

BAS125W 数据手册

  
SMD Type  
Diodes  
Silicon Schottky Diodes  
BAS125W;BAS125-04W  
BAS125-05W;BAS125-06W  
Features  
For low-loss, fast-recovery, meter protection,  
bias isolation and clamping application  
Integrated diffused guard ring  
Low forward voltage  
Absolute Maximum Ratings Ta = 25  
Parameter  
Diode reverse voltage  
Forward current  
Symbol  
VR  
Value  
25  
Unit  
V
IF  
100  
mA  
mA  
mW  
IFSM  
Ptot  
500  
Surge forward current ( t  
Total Power dissipation  
Junction temperature  
Storage temperature  
10ms)  
TS 25  
250  
Tj  
150  
Tstg  
-50 to +150  
310  
Junction ambient BAS125W ( Note 1)  
RthJA  
RthJA  
RthJS  
RthJS  
K/W  
K/W  
K/W  
K/W  
Junction ambient BAS125-04W  
Junction - soldering point BAS125W  
Junction - soldering point BAS125-04W  
Note  
06W ( Note 1)  
425  
230  
06W  
265  
Package mounted on alumina 15mm  
16.7mmm  
0.7mm  
Electrical Characteristics Ta = 25  
Parameter  
Reverse current  
Symbol  
Test Conditions  
VR = 20 V  
Min  
Typ  
Max  
150  
200  
400  
650  
900  
1.1  
Unit  
nA  
IR  
VR = 25 V  
IF = 1 mA  
385  
530  
800  
Forward voltage  
VF  
mV  
pF  
IF = 10 mA  
IF = 35 mA  
Diode capacitance  
CT  
RF  
VR = 0 V, f = 1 MHz  
IF = 5 mA, f = 10 KHz  
Differential forward resistance  
16  
Marking  
Type  
BAS125W  
13s  
BAS125-04W BAS125-05W BAS125-06W  
14s 15s 16s  
Marking  
1
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