5秒后页面跳转
BAS16 PDF预览

BAS16

更新时间: 2024-09-30 11:45:23
品牌 Logo 应用领域
FRONTIER 二极管开关光电二极管
页数 文件大小 规格书
2页 137K
描述
SURFACE MOUNT SWITCHING DIODE

BAS16 数据手册

 浏览型号BAS16的Datasheet PDF文件第2页 
Frontier Electronics Corp.  
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065  
TEL: (805) 522-9998 FAX: (805) 522-9989  
E-mail: frontiersales@frontierusa.com  
Web: http: //www.frontierusa.com  
SURFACE MOUNT SWITCHING DIODE  
BAS16  
A
DIM Min Max  
FEATURES  
z FAST SWITCHING  
z SURFACE MOUNT PACKAGE IDEALLY SUITED  
FOR AUTOMATIC INSERTION  
z HIGH CONDUCTANCE  
3
A
B
C
D
E
0.30 0.51  
1.20 1.60  
2.10 3.00  
0.85 1.05  
0.45 1.00  
1.70 2.10  
2.70 3.10  
0.00 0.13  
0.89 1.30  
0.30 0.61  
0.076 0.25  
B
C
1
2
1
D
3
G
H
J
K
L
E
G
MECHANICAL DATA  
H
z CASE: SOT-23, PLASTIC, DIMENSIONS IN MILLIMETERS  
z TERMINALS: SOLDERABLE PER MIL-STD-202, METHOD 208  
z POLARITY: SEE DIAGRAM  
M
K
M
J
z WEIGHT: 0.008 GRAMS  
L
RATINGS  
SYMBOL  
BAS16  
100  
UNITS  
V
NON-REPETITIVE PEAK REVERSE VOLTAGE  
PEAK REPETITIVE REVERSE VOLTAGE  
WORKING PEAK REVERSE VOLTAGE  
DC BLOCKING VOLTAGE  
VRM  
VRRM  
VRWM  
VR  
75  
V
RMS REVERSE VOLTAGE  
VR(RMS)  
IFM  
53  
V
FORWARD CONTINUOUS CURRENT (NOTE 1)  
300  
mA  
RECTIFIED CURRENTAVERAGE,HALF WAVE  
RECTIFICATION WITH RESIST LOAD  
IO  
150  
mA  
A
AT Tamb25°C AND 50MHZ (NOTE 1)  
NON-REPETITIVE PEAK FORWARD SURGE CURRENT @ t=1.0 S  
@ t=1.0 μ s  
1.0  
2.0  
IFSM  
POWER DISSIPATIONNOTE 1)  
mW  
350  
2.8  
PD  
mW/℃  
DERATE ABOVE 25℃  
THERMAL RESISTANCE  
Rθ  
JA  
357  
°C / W  
JUNCTION TO AMBIENT AIRNOTE 1)  
JUNCTION TEMPERATURE  
STORAGE TEMPERATURE RANGE  
MARKING  
TJ  
- 55 TO + 150  
- 55 TO + 150  
A6  
°C  
°C  
TS  
ELECTRICAL CHARACTERISTICS @ TA=25UNLESS OTHERWISE SPECIFIED  
CHARACTERISTICS  
SYMBOL  
Min.  
Max.  
Unit  
Test Condition  
715  
855  
1.0  
1.25  
1.0  
50  
mV  
mV  
V
IF =1.0 mA  
IF =10 mA  
IF =50 mA  
IF =150 mA  
VR=75V  
-
MAXIMUM FORWARD VOLTAGE  
VF  
V
IRM  
μ A  
VR=70V, TJ=150℃  
-
MAXIMUM PEAK REVERSE CURRENT  
30  
VR=25V, TJ=150℃  
CJ  
4.0  
6.0  
pF  
nS  
VR=0, f=1.0MHZ  
CAPACITANCE  
-
-
IF=10mA to IRR=1.0 mA  
VR=6.0V , RL=100Ω  
REVERSE RECOVERY TIME  
TRR  
NOTE: 1. DIODE ON CERAMIC SUBSTRATE 10mm x 8 mm x 0.7mm  
BAS16  
Page: 1  

与BAS16相关器件

型号 品牌 获取价格 描述 数据表
BAS16 (KAS16) KEXIN

获取价格

Switching Diodes
BAS16,215 ETC

获取价格

DIODE GEN PURP 100V 215MA SOT23
BAS16,235 NXP

获取价格

BAS16 series - High-speed switching diodes TO-236 3-Pin
BAS16.215 NXP

获取价格

High-speed switching diodes
BAS16/E8 VISHAY

获取价格

Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, TO-236AB
BAS16/E9 VISHAY

获取价格

Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, TO-236AB
BAS16/T1 ETC

获取价格

DIODE KLEINSIGNAL SMD
BAS16_ WTE

获取价格

SURFACE MOUNT SWITCHING DIODE
BAS16_05 PANJIT

获取价格

SURFACE MOUNT SWITCHING DIODES
BAS16_06 WTE

获取价格

SURFACE MOUNT FAST SWITCHING DIODE