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BA158-TB PDF预览

BA158-TB

更新时间: 2024-02-16 02:30:05
品牌 Logo 应用领域
WTE 快速恢复二极管
页数 文件大小 规格书
3页 50K
描述
1.0A FAST RECOVERY RECTIFIER

BA158-TB 技术参数

生命周期:Obsolete包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.61其他特性:FORMED LEAD OPTIONS ARE AVAILABLE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-PALF-W2元件数量:1
端子数量:2最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:0.15 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

BA158-TB 数据手册

 浏览型号BA158-TB的Datasheet PDF文件第2页浏览型号BA158-TB的Datasheet PDF文件第3页 
WTE  
POWER SEMICONDUCTORS  
BA157 – BA159  
1.0A FAST RECOVERY RECTIFIER  
Features  
!
Diffused Junction  
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
A
B
A
High Surge Current Capability  
Mechanical Data  
C
!
!
Case: Molded Plastic  
D
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: Cathode Band  
Weight: 0.34 grams (approx.)  
Mounting Position: Any  
DO-41  
Dim  
A
Min  
25.4  
4.06  
0.71  
2.00  
Max  
!
!
!
!
B
5.21  
0.864  
2.72  
C
Marking: Type Number  
D
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
BA157  
BA158  
BA159  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
400  
280  
600  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
420  
1.0  
V
A
Average Rectified Output Current  
(Note 1)  
@TA = 55°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
30  
A
Forward Voltage  
@IF = 1.0A  
VFM  
IRM  
1.2  
V
Peak Reverse Current  
@TA = 25°C  
5.0  
100  
µA  
At Rated DC Blocking Voltage @TA = 100°C  
Reverse Recovery Time (Note 2)  
Typical Junction Capacitance (Note 3)  
Operating Temperature Range  
trr  
Cj  
150  
250  
15  
500  
nS  
pF  
°C  
°C  
Tj  
-65 to +125  
-65 to +150  
Storage Temperature Range  
TSTG  
*Glass passivated forms are available upon request  
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case  
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.  
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
BA157 – BA159  
1 of 3  
© 2002 Won-Top Electronics  

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