5秒后页面跳转
B30H45G PDF预览

B30H45G

更新时间: 2024-09-16 01:22:55
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 385K
描述
30 Ampere Insulated Dual Common Cathode Schottky Barrier Rectifier Diode

B30H45G 数据手册

 浏览型号B30H45G的Datasheet PDF文件第2页 
B30H40G thru B30H200G  
B30H40G thru B30H200G  
Pb Free Plating Product  
30 Ampere Insulated Dual Common Cathode Schottky Barrier Rectifier Diode  
ITO-220AB/TO-220F-3L  
Unit:mm  
FEATURES  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O.  
.189(4.8)  
.165(4.2)  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
.130(3.3)  
.114(2.9)  
Flame Retardant Epoxy Molding Compound.  
• Metal silicon junction, majority carrier conduction  
• Low power loss, high efficiency.  
• High current capability  
• Guardring for overvoltage protection  
.114(2.9)  
.098(2.5)  
• For use in low voltage,high frequency inverters  
free wheeling , and polarlity protection applications.  
• In compliance with EU RoHS 2002/95/EC directives  
.071(1.8)  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
.1  
.1  
(2.55)  
(2.55)  
MECHANICAL DATA  
• Case: ITO-220AB/TO-220F-3L Insulated Pkg  
Terminals: solder plated, solderable per MIL-STD-750, Method 2026  
• Polarity: As marked.  
Case  
Case  
Case  
Case  
• Mounting Position: Any  
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "GD" Suffix "GS"  
Series  
Negative  
Common Cathode Common Anode  
Suffix "G" Suffix "GA"  
Positive  
• Weight:2.2 gram approximately.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
B30H40G B30H45G B30H50G B30H60G B30H80G B30H90G B30H100G B30H150G B30H200G  
PARAMETER  
SYMBOL  
VRRM  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
40  
28  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
90  
63  
90  
100  
70  
150  
105  
150  
200  
140  
200  
Maximum RMS Voltage  
VRMS  
V
V
A
Maxi mum DC Blocki ng Voltage  
Maxi mum Average Forward Current  
VDC  
100  
IF(AV)  
30  
Peak Forward Surge Current  
8.3 ms single  
half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
VF  
IR  
275  
A
Maximum Forward Voltage at 15A per leg  
0.7  
0.75  
0.85  
0.95  
0.90  
V
Maxi mum DC Reverse Current  
at Rated DC Blocking Voltage  
TJ=25  
0.1  
20  
mA  
TJ=125  
Typical Thermal Resistance  
RJC  
3.0  
/W  
Operating Junction and Storage Temperature  
Range  
-55 to  
+ 150  
TJ,TSTG  
-65 to + 175  
Note :  
Both Bonding and Chip structure are available.  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  
Page 1/2  
http://www.thinkisemi.com.tw/  

与B30H45G相关器件

型号 品牌 获取价格 描述 数据表
B30K MICRONETICS

获取价格

Double Balanced Mixers 3.0 to 7.0 GHz
B30V MICRONETICS

获取价格

Double Balanced Mixers 3.0 to 7.0 GHz
B31 DBLECTRO

获取价格

FEMALE HEADER PROFILE : 6.4mm STRAIGHT
B3100 DIODES

获取价格

3.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
B3100 CTC

获取价格

SCHOTTKY BARRIER RECTIFIERS
B3100 WEITRON

获取价格

Surface Mount Schottky Barrier Rectifiers
B3100-1 WEITRON

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, SMC-1, 2 PIN
B3100-13 DIODES

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, PLASTIC, SMC, 2 P
B3100-13-F DIODES

获取价格

3.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
B3100A WEITRON

获取价格

Surface Mount Schottky Barrier Rectifiers