B30H40G thru B30H200G
Pb
B30H40G thru B30H200G
Pb Free Plating Product
30 Ampere Insulated Dual Common Cathode Schottky Barrier Rectifier Diode
ITO-220AB/TO-220F-3L
Unit:mm
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
.189(4.8)
.165(4.2)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.130(3.3)
.114(2.9)
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvoltage protection
.114(2.9)
.098(2.5)
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
.1
.1
(2.55)
(2.55)
MECHANICAL DATA
• Case: ITO-220AB/TO-220F-3L Insulated Pkg
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
Case
Case
Case
Case
• Mounting Position: Any
Doubler
Tandem Polarity Tandem Polarity
Suffix "GD" Suffix "GS"
Series
Negative
Common Cathode Common Anode
Suffix "G" Suffix "GA"
Positive
• Weight:2.2 gram approximately.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
B30H40G B30H45G B30H50G B30H60G B30H80G B30H90G B30H100G B30H150G B30H200G
PARAMETER
SYMBOL
VRRM
UNITS
V
Maximum Recurrent Peak Reverse Voltage
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
90
63
90
100
70
150
105
150
200
140
200
Maximum RMS Voltage
VRMS
V
V
A
Maxi mum DC Blocki ng Voltage
Maxi mum Average Forward Current
VDC
100
IF(AV)
30
Peak Forward Surge Current
:8.3 ms single
half sine-wave superimposed on rated load
(JEDEC method)
IFSM
VF
IR
275
A
Maximum Forward Voltage at 15A per leg
0.7
0.75
0.85
0.95
0.90
V
Maxi mum DC Reverse Current
at Rated DC Blocking Voltage
TJ=25
℃
0.1
20
mA
℃
TJ=125
Typical Thermal Resistance
RJC
3.0
℃
/W
Operating Junction and Storage Temperature
Range
-55 to
+ 150
TJ,TSTG
-65 to + 175
℃
Note :
Both Bonding and Chip structure are available.
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/