B120-B160
Schottky Barrier Rectifiers
REVERSE VOLTAGE: 20 --- 60 V
CURRENT: 1.0 A
Features
DO - 214AC(SMA)
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11
Plastic package has Underwriters Laboratory
1 FlammabilityClassification 94V-0
4.5± 0.1
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For surface mounted applications
Low profile package
Built-in strain relief
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Metal silicon junction, majority carrier conduction
High surge capability
5.1± 0.2
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Low power loss,high effciency
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11
For use in low voltage high frequencyinverters,free
1 wheeling and polarityprotection applications
Guardring for overvoltage protection
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0.2± 0.05
1.3± 0.2
High temperature soldering guaranteed:250oC/10
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1 seconds at terminals
Mechanical Data
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Case:JEDEC DO-214AC,molded plastic over
11passivated chip
Dimensions in millimeters
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Polarity: Color band denotes cathode end
Weight: 0.002 ounces, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified
UNITS
B160
Device marking code
B120
B130
B140
B150
Maximum recurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRWS
VDC
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
V
V
V
Maximum DC blocking voltage
Maximum average forw ord rectified current at
1.0
I(AV)
A
A
x
TL(SEEFIG.1)
Peak forw ard surge current 8.3ms single half-
x sine-w ave superimposed on rated load(JEDEC
x Method)
IFSM
30.0
Maximum instantaneous forw ard voltage at
x 1.0A(NOTE.1)
0.5
0.7
VF
IR
V
Maximum DC reverse current (NOTE.1)
x @TA=25oC
0.5
mA
at rated DC blockjing voltage
@TA=100oC
10.0
88.0
20.0
Rθ
JA
oC/W
Typical thermal resitance (NOTE. 2)
Rθ
JL
Storage temperature range Operating junction
x and storage temperature range
oC
oC
- 55 --- +125
- 55 --- +150
Tj
Storage temperature range
TSTG
NOTE: 1.Pulse test:300 S pulse width,1%duty cycle
μ
2. P.C.B.mounted with 0.2"X0.2"(5.0X5.0mm2)copper pad areas
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