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B0530W PDF预览

B0530W

更新时间: 2024-10-03 22:27:07
品牌 Logo 应用领域
美台 - DIODES 二极管
页数 文件大小 规格书
2页 64K
描述
0.5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

B0530W 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:R-PDSO-G2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.2
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.43 V
JESD-30 代码:R-PDSO-G2JESD-609代码:e0
最大非重复峰值正向电流:5.5 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.41 W
最大重复峰值反向电压:30 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

B0530W 数据手册

 浏览型号B0530W的Datasheet PDF文件第2页 
B0530W  
0.5A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
Features  
·
·
Low Forward Voltage Drop  
Guard Ring Construction for  
Transient Protection  
SOD-123  
Dim  
A
Min  
3.55  
2.55  
1.40  
Max  
3.85  
2.85  
1.70  
1.35  
·
High Conductance  
Mechanical Data  
·
H
D
B
J
Case: SOD-123, Plastic  
Case material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Polarity: Cathode Band  
Leads: Solderable per MIL-STD-202,  
Method 208  
C
G
·
D
A
B
E
0.55 Typical  
0.25  
0.11 Typical  
·
·
·
G
H
E
C
J
0.10  
·
·
·
·
Marking: Date Code & Type Code, See Page 2  
Type Code: Marking: SE  
Weight: 0.01 grams (approx.)  
a
0°  
8°  
All Dimensions in mm  
Ordering Information: See Page 2  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
B0530W  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
21  
V
A
Average Rectified Output Current  
@ TL = 100°C  
0.5  
Non-Repetitive Peak Forward Surge Current  
8.3ms single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
5.5  
A
Pd  
RqJA  
Power Dissipation (Note 1)  
410  
244  
mW  
Typical Thermal Resistance Junction to Ambient  
Operating and Storage Temperature Range  
Voltage Rate of Change (Note 3)  
°C/W  
Tj, TSTG  
dv/dt  
-65 to +125  
1000  
°C  
V/ms  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
B0530W  
Unit  
Test Conditions  
V(BR)R  
IR = 130mA  
Minimum Reverse Breakdown Voltage (Note 2)  
30  
V
IF = 0.1A, Tj = 25°C  
IF = 0.5A, Tj = 25°C  
Maximum Forward Voltage Drop  
(Note 2)  
0.375  
0.430  
VFM  
V
V
V
R = 15V, Tj = 25°C  
R = 30V, Tj = 25°C  
Maximum Leakage Current  
(Note 2)  
20  
IRM  
CT  
mA  
130  
f = 1MHz, VR = 0V DC  
Total Capacitance  
170  
pF  
Notes:  
1. Device mounted on FR-4 PC board, 2"x2", 2 oz. Copper, single sided, Cathode pad dimensions 0.75"x1.0",  
Anode pad dimensions 0.25"x1.0".  
2. Pulse Test: Pulse width = 300ms, Duty Cycle £ 2%.  
3. dv/dt measured at rated VR.  
DS30139 Rev. 2 - 2  
1 of 2  
B0530W  
www.diodes.com  

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