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B0530WS-13 PDF预览

B0530WS-13

更新时间: 2024-02-18 20:08:32
品牌 Logo 应用领域
美台 - DIODES 光电二极管
页数 文件大小 规格书
2页 65K
描述
Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM), Silicon, PLASTIC PACKAGE-2

B0530WS-13 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:GREEN, PLASTIC PACKAGE-2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.41
其他特性:HIGH RELIABILITY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.235 W
参考标准:AEC-Q101最大重复峰值反向电压:30 V
表面贴装:YES技术:SCHOTTKY
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

B0530WS-13 数据手册

 浏览型号B0530WS-13的Datasheet PDF文件第2页 
SPICE MODEL: B0530WS  
B0530WS  
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
Features  
·
·
·
·
Low Forward Voltage Drop  
Guard Ring Construction for Transient Protection  
High Conductance  
SOD-323  
Available in Lead Free/RoHS Compliant Version (Note 3)  
Dim  
A
Min  
2.30  
1.60  
1.20  
1.00  
0.25  
0.20  
0.10  
Max  
2.70  
1.80  
1.40  
1.10  
0.35  
0.40  
0.15  
D
H
J
B
Mechanical Data  
G
C
·
·
Case: SOD-323  
D
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
A
B
E
G
H
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208 (Note  
5 on Page 2)  
C
E
J
0.05 Typical  
0° 8°  
·
·
Leads: Solderable per MIL-STD-202, Method 208  
a
Also Available in Lead Free Plating (Matte Tin Finish  
annealed over Alloy 42 leadframe). Please See Ordering  
Information, Note 5, Page 2  
All Dimensions in mm  
·
·
Polarity: Cathode Band  
Marking: Type Code and Cathode Band  
Type Code: SE  
·
Weight: 0.004 grams (approx.)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Value  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
21  
V
A
Average Rectified Output Current  
0.5  
Non-Repetitive Peak Forward Surge Current  
8.3ms single half sine-wave superimposed on rated load  
(JEDEC Method)  
IFSM  
2
A
Pd  
Power Dissipation (Note 1)  
235  
426  
mW  
°C/W  
°C  
RqJA  
Typical Thermal Resistance Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-40 to +125  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
V(BR)R  
IR = 500mA  
Reverse Breakdown Voltage (Note 2)  
30  
¾
¾
V
IF = 0.1A  
IF = 0.5A  
¾
¾
¾
0.40  
0.36  
0.45  
VF  
Forward Voltage Drop (Note 2)  
V
VR = 15V  
VR = 20V  
VR = 30V  
¾
¾
¾
¾
¾
¾
80  
IR  
Leakage Current (Note 2)  
Total Capacitance  
100  
500  
mA  
CT  
f = 1MHz, VR = 0VDC  
¾
58  
¾
pF  
Note: 1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website  
at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
3. No purposefully added lead.  
DS30249 Rev. 7 - 2  
1 of 2  
B0530WS  
www.diodes.com  
ã Diodes Incorporated  

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