Datasheet > B0530W

B0530W

更新时间： 2024-10-04 09:07:03

品牌	Logo	应用领域
金誉半导体 - HTSEMI		肖特基二极管
页数	文件大小	规格书
2页	366K
描述
SCHOTTKY BARRIER DIODE

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中文翻译

获取价格

数据手册

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B0530W 数据手册

B0520LW/B0530W/B0540W

SOD-123

SCHOTTKY BARRIER DIODE

FEATURES

Low Forward Voltage Drop

Guard Ring Construction for Transient Protection

High Conductance

Also Available in Lead Free Version

MARKING: B0520LW:SD

B0530W: SE

B0540W: SF

Maximum Ratings @T_A=25℃

Parameter

Symbol

V_RRM

V_RWM

V_R

B0520LW

B0530W

B0540W

Unit

Peak Repetitive Peak reverse voltage

Working Peak Reverse Voltage

DC Blocking

Voltage

RMS Reverse Voltage Reverse voltage (DC)

Average rectified output Current

Forward current surge peak

Power dissipation

V_R(RMS)

I_o

0.5

I_FSM

5.5

P_D

500

℃/W

℃

Thermal Resistance Junction to Ambient

Junction temperature

R_θJA

T_j

250

150

Storage temperature

T_STG

dv/dt

-65~+150

1000

℃

V/μS

Voltage Rate of Change

Electrical Characteristics @T_A=25℃

Parameter

Symbol

B0520LW

B0530W

B0540W

Unit

Conditions

I_R=250μA

I_R=200μA

I_R=20μA

I_F=0.1A

Minimum Reverse

V_(BR)R

Breakdown Voltage

V_F1

V_F2

V_F3

I_R1

I_R2

I_R3

I_R4

I_R5

C_T

0.320

0.385

0.375

0.430

Forward voltage

Reverse current

0.510

0.62

I_F=0.5A

I_F=1A

V_R=10V

μA

V_R=15V

250

V_R=20V

Reverse current

μA

130

V_R=30V

170

V_R=40V

Capacitance between terminals

V_R=0,f=1MHz

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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