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AVSMBG16AE3 PDF预览

AVSMBG16AE3

更新时间： 2024-09-14 19:29:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
3页 116K
描述
Trans Voltage Suppressor Diode, 600W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

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AVSMBG16AE3 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：DO-215AA包装说明：R-PDSO-G2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.84Is Samacsys：N
其他特性：HIGH RELIABILITY最小击穿电压：17.8 V
最大钳位电压：26 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-215AAJESD-30 代码：R-PDSO-G2
JESD-609代码：e3最大非重复峰值反向功率耗散：600 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：1.38 W
认证状态：Not Qualified最大重复峰值反向电压：16 V
子类别：Transient Suppressors表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

AVSMBG16AE3 数据手册

 浏览型号AVSMBG16AE3的Datasheet PDF文件第2页浏览型号AVSMBG16AE3的Datasheet PDF文件第3页 
AVSMBJ5.0A thru AVSMBJ170A, CA e3 and  
AVSMBG5.0A thru AVSMBG170A, CA, e3  
SURFACE MOUNT 600 Watt  
Transient Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
PACKAGE  
This AVSMBJ5.0A-170A or AVSMBG5.0A-170A series of surface mount 600 W Transient  
Voltage Suppressors (TVSs) protects a variety of voltage-sensitive components from  
destruction or degradation. It is available in J-bend design (AVSMBJ) with the DO-214AA  
package for greater PC board mounting density or in a Gull-wing design (AVSMBG) in the  
DO-215AA for visible solder connections.  
It is available in both unidirectional and  
bidirectional configurations with an A or CA suffix part number as well as RoHS Compliant  
designated by an “e3”suffix. Their clamping response time is virtually instantaneous. As a  
result, they can be used for protection from ESD or EFT per IEC61000-4-2 and IEC61000-  
4-4, or for inductive switching environments and induced RF protection. They can also  
protect from secondary lightning effects per IEC61000-4-5 and class levels defined herein.  
Microsemi also offers numerous other TVS products to meet higher and lower power  
demands and special applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD  
and EFT protection respectively  
Selections for 5.0 to 170 volts standoff voltages (VWM)  
100% screened as follows for avionics applications:  
1. Temperature Cycle (thermal shock) 20 Cycles -55°C to 125°C  
2. Solder Capability: Stress Tested at 260°C for 10 sec.  
3. Surge 1 pulse at 110% Ipp (Both Directions for Bidirectional)  
4. Surge 1 pulse at 100% Ipp (Both Directions for Bidirectional)  
5. Electrical Test  
Secondary lightning protection per IEC61000-4-5 with 42  
Ohms source impedance:  
Class 1: AVSMB 5.0 to AVSMB 120A or CA  
Class 2: AVSMB 5.0 to AVSMB 60A or CA  
Class 3: AVSMB 5.0 to AVSMB 30A or CA  
Class 4: AVSMB 5.0 to AVSMB 15A or CA  
6. Burn-in (HTRB) 48 hrs 125°C Polarity A for Bidirectional (96 hrs  
for Unidirectional)  
Secondary lightning protection per IEC61000-4-5 with 12  
Ohms source impedance:  
7. Electrical Test Delta ID and V(BR) Polarity A  
Class 1: AVSMB 5.0 to AVSMB 36A or CA  
Class 2: AVSMB 5.0 to AVSMB 18A or CA  
8. Burn-in (HTRB) 48 hrs 125°C Polarity B for bidirectional (not  
required for Unidirectional)  
Compliant to RTCA/DO-160E Waveform 4, Levels 1 & 2  
9. Electrical Test Delta ID and V(BR) Polarity B (Not required for  
Unidirectional)  
Compliant to RTCA/DO-160E Waveform 4, Level 3 for  
AVSMB5.0 to AVSMB20A or CA  
10. Electrical Test GO-NO-GO  
Compliant to RTCA/DO-160E Waveform 4, Level 4 for  
AVSMB5.0 to AVSMB7.5  
RoHS Compliant devices available and designated by  
adding an “e3” suffix  
Economical surface mount design in both J-bend or Gull-wing  
terminations.  
Compliant to RTCA/DO-160E Waveform 5A, Level 1  
Compliant to RTCA/DO-160E Waveform 5A, Level 2 for  
AVSMB5.0 to AVSMB6.0A or CA  
Protects sensitive components such as IC’s, CMOS, Bipolar,  
BiCMOS, ECL, DTL, T2L, etc.  
Protection from switching transients & induced RF  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
2-Stage: Robust, High Reliability Lead Frame  
Peak Pulse Power dissipation at 25ºC: 600 watts at 10/1000 μs  
(also see Fig 1,2, and 3)  
CASE: Void-free transfer molded thermosetting epoxy  
body meeting UL94V-0  
Impulse repetition rate (duty factor): 0.01%  
tclamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
TERMINALS: Gull-wing or C-bend (modified J-bend)  
leads Tin-Lead or RoHS compliant annealed matte-Tin  
plating solderable per MIL-STD-750, method 2026  
Operating and Storage temperature: -65ºC to +150ºC  
Thermal resistance: 25 ºC/W junction to lead or 90ºC/W junction  
to ambient when mounted on FR4 PC board (1oz Cu) with  
recommended footprint (see last page)  
Steady-State Power dissipation: 5 watts at TL = 25oC, or 1.38  
watts at TA = 25ºC when mounted on FR4 PC board with  
recommended footprint  
POLARITY: Cathode indicated by band. No band on bi-  
directional devices.  
MARKING: See Page 2 marking column.  
TAPE & REEL option: Standard per EIA-481-1-A with 12  
mm tape, 750 per 7 inch reel or 2500 per 13 inch reel.  
WEIGHT: 0.1 grams  
Forward Surge at 25ºC: 100 amps peak impulse of 8.3 ms half-  
sine wave (unidirectional only)  
See package dimension on last page  
Solder temperatures: 260 ºC for 10 s (maximum)  
Copyright 2008  
1-29-2008 REV D; AVSMB5-170  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

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AVSMBG17AE3 MICROSEMI

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AVSMBG17CA MICROSEMI

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AVSMBG17CAE3 MICROSEMI

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