Datasheet > AUIRF1010Z_12

AUIRF1010Z_12

更新时间： 2024-10-01 12:53:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
15页	280K
描述
Advanced Process Technology

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AUIRF1010Z_12 数据手册

PD - 97458A

AUIRF1010Z

AUIRF1010ZS

AUTOMOTIVE GRADE

AUIRF1010ZL

Features

HEXFET^®Power MOSFET

●

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to

Tjmax

V_(BR)DSS

55V

7.5m

R_DS(on)max.



●

Lead-Free,RoHSCompliant

Automotive Qualified *

I_{D (Silicon Limited)}

I_{D (Package Limited)}

94A

75A

Description

Specifically designed for Automotive applications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of

this design are a 175°C junction operating tempera-

ture, fast switching speed and improved repetitive

avalanche rating . These features combine to make

this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety

of other applications.

D²Pak

TO-262

TO-220AB

AUIRF1010ZS

AUIRF1010ZL

AUIRF1010Z

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings

only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.

Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power

dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise

specified.

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

@ T = 25°C

@ T = 100°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

@ T = 25°C

360

140

@T = 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

0.90

± 20

W/°C

E_AS

130

180

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested )

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

-55 to + 175

Operating Junction and

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds (1.6mm from case )

Mounting Torque, 6-32 or M3 screw

300

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

1.11

–––

Units

R_JC

Junction-to-Case

R_CS

R_JA

0.50

–––

°C/W

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

08/13/2012

12 3 4 5 6 7...15

中文翻译

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与AUIRF1010Z_12相关器件

型号	品牌	获取价格	描述	数据表
AUIRF1010ZL	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRF1010ZS	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRF1010ZSTRL	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRF1010ZSTRR	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRF1018ES	INFINEON	获取价格	Advanced Process Technology
AUIRF1018ESTRL	INFINEON	获取价格	Advanced Process Technology
AUIRF1018ESTRR	INFINEON	获取价格	Advanced Process Technology
AUIRF1324	INFINEON	获取价格	HEXFETPower MOSFET
AUIRF1324L	INFINEON	获取价格	HEXFETPower MOSFET
AUIRF1324S	INFINEON	获取价格	HEXFETPower MOSFET

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