Datasheet > ATF-13336-TR1

ATF-13336-TR1

更新时间： 2024-01-19 05:48:07

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体晶体管放大器
页数	文件大小	规格书
3页	48K
描述
2-16 GHz Low Noise Gallium Arsenide FET

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ATF-13336-TR1 数据手册

2–16 GHz Low Noise

Gallium Arsenide FET

Technical Data

ATF-13336

Features

Description

36 micro-X Package

• Low Noise Figure:

1.4 dBTypicalat12 GHz

The ATF-13336 is a high perfor-

mance gallium arsenide Schottky-

barrier-gate field effect transistor

housed in a cost effective micro-

strip package. Its premium noise

figure makes this device appropri-

ate for use in low noise amplifiers

operatinginthe2-16 GHz

• High Associated Gain:

9.0 dBTypicalat12 GHz

• High Output Power:

17.5 dBmTypicalP _1dBat

12 GHz

• Cost Effective Ceramic

Microstrip Package

frequency range.

This GaAs FET device has a

nominal 0.3 micron gate length

with a total gate periphery of

250 microns. Provengoldbased

metallization systems and nitride

passivation assure a rugged,

reliable device.

• Tape-and-Reel Packaging

Option Available^[1]

Electrical Specifications, T_A= 25°C

Symbol

Parameters and Test Conditions

Units Min. Typ. Max.

NF_O

Optimum Noise Figure: V_DS= 2.5 V, I_DS= 20 mA

f=8.0GHz

f=12.0GHz dB

f=14.0GHz

1.2

1.4

1.6

G_A

Gain@NF_O:V_DS=2.5V, I_DS= 20 mA

f=8.0GHz

f=12.0GHz dB

f=14.0GHz dB

11.5

9.0

7.5

8.0

P_{1 dB}

Power Output @ 1 dB Gain Compression:

V_DS=4V, I_DS=40mA

f=12.0GHz dBm

17.5

G_{1 dB}

g_m

1 dB Compressed Gain: V_DS= 4 V, I_DS= 40 mA

Transconductance: V_DS= 2.5 V, V_GS= 0 V

Saturated Drain Current: V_DS= 2.5 V, V_GS= 0 V

Pinch-off Voltage: V_DS= 2.5 V, I_DS= 1 mA

f=12.0GHz dB

8.5

mmho 25

I_DSS

V_P

-4.0

-1.5

-0.5

Note:

1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.

5-36

5965-8724E

12 3

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