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ATF-13XXX PDF预览

ATF-13XXX

更新时间： 2024-01-24 02:03:30
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其他 - ETC 光电二极管
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Low Noise Gallium Arsenide FET -- Reliability Data (20K in pdf)

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Low Noise Gallium Arsenide FET  
Reliability Data  
ATF-10XXX  
ATF-13XXX  
latest revision of MIL-STD-883.  
Data was gathered from the  
For the purpose of this reliability  
data sheet, a failure is any part  
which fails to meet the electrical  
and/or mechanical specification  
listed in the Communications  
Components Designer's Catalog.  
Description  
The following cumulative test  
product qualification, reliability  
results have been obtained from  
monitor, and engineering evalua-  
testing performed at Hewlett-  
tion for the LYG GaAs process.  
Packard in accordance with the  
1. Life Test  
A. Demonstrated Performance  
Units  
Tested  
Total  
Total  
Failure Rate  
Test Name  
Test Condition  
Device Hrs. Failed ( %/1K Hours)  
High Temperature  
Nominal Bias at  
150  
15,000  
0
0
0
0
Operating Life  
(O.L.)  
T
= 175°C, 1000 hrs.  
ch  
High Temperature  
Ambient Temperature  
T = 150°C, 1000 hrs.  
225  
225,000  
Storage (HTS)*  
A
B. Failure Rate Prediction  
The failure rate will depend on  
the junction temperature of the  
device. The estimated life at  
different temperatures is calcu-  
lated, using the Arrhenius plot  
with activation energy of 1.2eV,  
and the device thermal resistance  
of the stress board is 130°C/W,  
and listed in the following table.  
( 1)  
( 2)  
Point  
90% Confidence Level  
Junction  
Temp.  
MTTF*  
( hours)  
MTTF  
FIT  
333  
50  
.05  
MTTF  
( hours)  
( 3)  
( 3)  
T ( °C)  
FIT  
J
-6  
-6  
175  
150  
100  
47  
3 x 10  
2 x 10  
2 x 10  
8 x 10  
0.5 x 10  
9.5 x 10  
9.5 x 10  
2000  
105  
1.05  
-7  
-8  
-8  
-9  
-11  
-11  
.001  
3.5 x 10  
.0003  
*MTTF data calculated from high temperature Operating Life tests.  
12

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