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ATF-13786-TR1 PDF预览

ATF-13786-TR1

更新时间: 2024-02-20 21:30:18
品牌 Logo 应用领域
安捷伦 - AGILENT 振荡器晶体晶体管
页数 文件大小 规格书
3页 49K
描述
Surface Mount Gallium Arsenide FET for Oscillators

ATF-13786-TR1 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-PRDB-G4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84Is Samacsys:N
配置:SINGLE最小漏源击穿电压:4 V
最大漏极电流 (ID):0.1 AFET 技术:METAL SEMICONDUCTOR
最高频带:X BANDJESD-30 代码:O-PRDB-G4
元件数量:1端子数量:4
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:DISK BUTTON极性/信道类型:N-CHANNEL
功耗环境最大值:0.225 W认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

ATF-13786-TR1 数据手册

 浏览型号ATF-13786-TR1的Datasheet PDF文件第2页浏览型号ATF-13786-TR1的Datasheet PDF文件第3页 
Surface Mount Gallium  
Arsenide FET for Oscillators  
Technical Data  
ATF-13786  
Features  
• Low Cost Surface Mount  
Plastic Package  
Description  
Hewlett-Packard’sATF-13786isa  
low cost Gallium Arsenide  
85milPlasticSurface  
MountPackage  
Schottky barrier-gate field effect  
transistor housed in a surface  
mount plastic package. This  
device is designed for use in low  
cost, surface mount oscillators  
operating over the RF and  
microwave frequency ranges. The  
ATF-13786 has sufficient gain for  
easy use as a negative R cell,  
without excess gain that can lead  
to unwanted oscillations and  
mode jumping. The gate structure  
used in the fabrication of this  
device results in phase noise  
performance superior to that of  
most other MESFETs. These  
features make this device  
particularly well suited for low  
power(<+10dBm)commercial  
oscillator applications such as are  
encountered in DBS, TVRO, and  
MMDS television receivers, or  
hand-held transceivers operating  
in the 900 MHz, 2.4 GHz, and  
5.7 GHzISMbands.  
• High fMAX: 60 GHz Typical  
• Low Phase Noise at 10 GHz:  
-110dBc/Hz@100kHzTypical  
• Output Power at 10 GHz:  
up to 10 dBm  
• Tape-and-Reel Packaging  
Option Available  
PinConfiguration  
4
SOURCE  
25  
GATE  
1
DRAIN  
3
20  
MSG  
15  
MAG  
S
21  
MSG  
10  
5
2
SOURCE  
This GaAs FET device has a  
nominal 0.3 micron gate length  
with a total gate periphery of  
250 microns.Provengoldbased  
metallization systems and nitride  
passivation assure a rugged,  
reliable device.  
0
5
10  
20  
1
FREQUENCY (GHz)  
Insertion Power Gain, Maximum  
Available Gain, and Maximum Stable  
Gain vs. Frequency.  
VDS = 3 V, IDS = 40 mA.  
5965-8721E  
5-43  

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