ATF-13736-TR1

更新时间： 2024-09-23 22:47:59

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体晶体管
页数	文件大小	规格书
4页	51K
描述
2-16 GHz Low Noise Gallium Arsenide FET

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中文翻译

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技术参数
数据手册

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ATF-13736-TR1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.85	Is Samacsys：	N
最大漏极电流 (Abs) (ID)：	0.09 A	FET 技术：	METAL SEMICONDUCTOR
JESD-609代码：	e0	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	功耗环境最大值：	0.225 W
子类别：	Other Transistors	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

ATF-13736-TR1 数据手册

2–16 GHz Low Noise

Gallium Arsenide FET

Technical Data

ATF-13736

Features

Description

36 micro-X Package

• Low Noise Figure:

1.8 dBTypicalat12 GHz

The ATF-13736 is a high perfor-

mance gallium arsenide Schottky-

barrier-gate field effect transistor

housed in a cost effective

• High Associated Gain:

9.0 dBTypicalat12 GHz

microstrip package. Its noise

figure makes this device appropri-

ate for use in the gain stages of

low noise amplifiers operating in

the 2-16 GHz frequency range.

• High Output Power:

17.5 dBTypicalat12 GHz

• Cost Effective Ceramic

Microstrip Package

250 microns. Provengoldbased

metallization systems and nitride

passivation assure a rugged,

reliable device.

• Tape-and-Reel Packaging

Option Available^[1]

This GaAs FET device has a

nominal 0.3 micron gate length

with a total gate periphery of

Electrical Specifications, T_A= 25°C

Symbol

Parameters and Test Conditions

Optimum Noise Figure: V_DS= 2.5 V, I_DS= 20 mA

Units Min. Typ. Max.

NF_O

f=8.0GHz

1.5

1.8

f=12.0GHz dB

2.2

f=14.0GHz dB

2.1

G_A

Gain@NF_O:V_DS=2.5V, I = 20 mA

f=8.0GHz

f=12.0GHz dB

f=14.0GHz dB

11.5

9.0

7.0

8.0

P_{1 dB}

Power Output @ 1 dB Gain Compression:

V_DS=4V, I_DS=40mA

f=12.0GHz dBm

17.5

G_{1 dB}

g_m

1 dB Compressed Gain: V_DS= 4 V, I_DS= 40 mA

Transconductance: V_DS= 2.5 V, V_GS= 0 V

Saturated Drain Current: V_DS= 2.5 V, V_GS= 0 V

Pinch-off Voltage: V_DS= 2.5 V, I_DS= 1 mA

f=12.0GHz dB

8.5

mmho 25

I_DSS

V_P

-4.0

-1.5

-0.5

Note:

1. Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors”.

5-39

5965-8722E

12 3 4

中文翻译

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