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ATF-13786-STR PDF预览

ATF-13786-STR

更新时间: 2024-09-23 22:37:07
品牌 Logo 应用领域
安捷伦 - AGILENT 振荡器晶体晶体管放大器
页数 文件大小 规格书
3页 49K
描述
Surface Mount Gallium Arsenide FET for Oscillators

ATF-13786-STR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92Is Samacsys:N
最大漏极电流 (Abs) (ID):0.1 AFET 技术:METAL SEMICONDUCTOR
JESD-609代码:e0最高工作温度:150 °C
极性/信道类型:N-CHANNEL功耗环境最大值:0.225 W
子类别:Other Transistors端子面层:Tin/Lead (Sn/Pb)
Base Number Matches:1

ATF-13786-STR 数据手册

 浏览型号ATF-13786-STR的Datasheet PDF文件第2页浏览型号ATF-13786-STR的Datasheet PDF文件第3页 
Surface Mount Gallium  
Arsenide FET for Oscillators  
Technical Data  
ATF-13786  
Features  
• Low Cost Surface Mount  
Plastic Package  
Description  
Hewlett-Packard’sATF-13786isa  
low cost Gallium Arsenide  
85milPlasticSurface  
MountPackage  
Schottky barrier-gate field effect  
transistor housed in a surface  
mount plastic package. This  
device is designed for use in low  
cost, surface mount oscillators  
operating over the RF and  
microwave frequency ranges. The  
ATF-13786 has sufficient gain for  
easy use as a negative R cell,  
without excess gain that can lead  
to unwanted oscillations and  
mode jumping. The gate structure  
used in the fabrication of this  
device results in phase noise  
performance superior to that of  
most other MESFETs. These  
features make this device  
particularly well suited for low  
power(<+10dBm)commercial  
oscillator applications such as are  
encountered in DBS, TVRO, and  
MMDS television receivers, or  
hand-held transceivers operating  
in the 900 MHz, 2.4 GHz, and  
5.7 GHzISMbands.  
• High fMAX: 60 GHz Typical  
• Low Phase Noise at 10 GHz:  
-110dBc/Hz@100kHzTypical  
• Output Power at 10 GHz:  
up to 10 dBm  
• Tape-and-Reel Packaging  
Option Available  
PinConfiguration  
4
SOURCE  
25  
GATE  
1
DRAIN  
3
20  
MSG  
15  
MAG  
S
21  
MSG  
10  
5
2
SOURCE  
This GaAs FET device has a  
nominal 0.3 micron gate length  
with a total gate periphery of  
250 microns.Provengoldbased  
metallization systems and nitride  
passivation assure a rugged,  
reliable device.  
0
5
10  
20  
1
FREQUENCY (GHz)  
Insertion Power Gain, Maximum  
Available Gain, and Maximum Stable  
Gain vs. Frequency.  
VDS = 3 V, IDS = 40 mA.  
5965-8721E  
5-43  

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