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AT52BR3228AT-70CI PDF预览

AT52BR3228AT-70CI

更新时间: 2024-09-27 22:36:07
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存存储内存集成电路静态存储器异步传输模式ATM
页数 文件大小 规格书
46页 364K
描述
32-megabit Flash + 4-megabit/ 8-megabit SRAM Stack Memory

AT52BR3228AT-70CI 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA, BGA66,8X12,32针数:66
Reach Compliance Code:compliantHTS代码:8542.32.00.71
风险等级:5.28Is Samacsys:N
最长访问时间:70 ns其他特性:SRAM IS ORGANISED AS 512K X 16
JESD-30 代码:R-PBGA-B66JESD-609代码:e0
长度:10 mm内存密度:33554432 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:16
混合内存类型:FLASH+SRAM湿度敏感等级:3
功能数量:1端子数量:66
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA66,8X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):240
电源:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.000006 A
子类别:Other Memory ICs最大压摆率:0.015 mA
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:30宽度:8 mm
Base Number Matches:1

AT52BR3228AT-70CI 数据手册

 浏览型号AT52BR3228AT-70CI的Datasheet PDF文件第2页浏览型号AT52BR3228AT-70CI的Datasheet PDF文件第3页浏览型号AT52BR3228AT-70CI的Datasheet PDF文件第4页浏览型号AT52BR3228AT-70CI的Datasheet PDF文件第5页浏览型号AT52BR3228AT-70CI的Datasheet PDF文件第6页浏览型号AT52BR3228AT-70CI的Datasheet PDF文件第7页 
Features  
32-Mbit Flash and 4-Mbit/8-Mbit SRAM  
Single 66-ball (8 mm x 10 mm x 1.2 mm) CBGA Package  
2.7V to 3.3V Operating Voltage  
Flash  
2.7V to 3.3V Read/Write  
Access Time – 70 ns  
Sector Erase Architecture  
– Sixty-three 32K WordSectors with Individual Write Lockout  
– Eight 4K Word Sectors with Individual Write Lockout  
Fast Word Program Time – 15 µs  
32-megabit  
Flash  
+ 4-megabit/  
8-megabit  
SRAM  
Sector Erase Time – 300 ms  
Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming from Any Sector by Suspending Erase of a  
Different Sector  
– Supports Reading Any Word by Suspending Programming of Any Other Word  
Low-power Operation  
– 12 mA Active  
– 13 µA Standby  
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection  
VPP Pin for Write Protection and Accelerated Program/Erase Operations  
RESET Input for Device Initialization  
Sector Lockdown Support  
Stack Memory  
Top or Bottom Boot Block Configuration Available  
128-bit Protection Register  
Minimum 100,000 Erase Cycles  
AT52BR3224A  
AT52BR3224AT  
AT52BR3228A  
AT52BR3228AT  
SRAM  
4-megabit (256K x 16)/8-megabit (512K x 16)  
2.7V to 3.3V VCC  
70 ns Access Time  
Fully Static Operation and Tri-state Output  
1.2V (Min) Data Retention  
Industrial Temperature Range  
Flash Boot  
Location  
Flash Plane  
Architecture  
SRAM  
Configuration  
Preliminary  
Device Number  
AT52BR3224A  
AT52BR3224AT  
AT52BR3228A  
AT52BR3228AT  
Bottom  
Top  
32M  
32M  
32M  
32M  
256K x 16  
256K x 16  
512K x 16  
512K x 16  
Bottom  
Top  
Rev. 3338B–STKD–6/03  

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