5秒后页面跳转
AT52BR3244T-11CI PDF预览

AT52BR3244T-11CI

更新时间: 2024-01-25 15:05:39
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
44页 345K
描述
Memory Circuit, 2MX16, CMOS, PBGA66

AT52BR3244T-11CI 数据手册

 浏览型号AT52BR3244T-11CI的Datasheet PDF文件第2页浏览型号AT52BR3244T-11CI的Datasheet PDF文件第3页浏览型号AT52BR3244T-11CI的Datasheet PDF文件第4页浏览型号AT52BR3244T-11CI的Datasheet PDF文件第5页浏览型号AT52BR3244T-11CI的Datasheet PDF文件第6页浏览型号AT52BR3244T-11CI的Datasheet PDF文件第7页 
Features  
32-Mbit Flash and 4-Mbit/8-Mbit SRAM  
Single 66-ball 8 mm x 11 mm CBGA Package  
2.7V to 3.3V Operating Voltage  
Flash  
2.7V to 3.3V Read/Write  
Access Time – 85, 90, 110 ns  
Sector Erase Architecture  
– Sixty-three 32K Word (64K Byte) Sectors with Individual Write Lockout  
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout  
Fast Word Program Time – 20 µs  
32-megabit  
(2M x 16) Flash  
+ 4-megabit  
(256K x 16)/  
8-megabit  
(512K x 16)  
SRAM  
Stack Memory  
Fast Sector Erase Time – 200 ms  
Dual-plane Organization, Permitting Concurrent Read while Program/Erase  
Memory Plane A: Eight 4K Word and Fifteen 32K Word Sectors  
Memory Plane B: Forty-eight 32K Word Sectors  
Erase Suspend Capability  
– Supports Reading/Programming Data from Any Sector by Suspending Erase of  
Any Different Sector  
Low-power Operation  
– 25 mA Active  
– 10 µA Standby  
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection  
VPP Pin for Accelerated Program/Erase Operations  
RESET Input for Device Initialization  
Sector Lockdown Support  
Top or Bottom Boot Block Configuration Available  
128-bit Protection Register  
AT52BR3244  
AT52BR3244T  
AT52BR3248  
AT52BR3248T  
SRAM  
4-megabit (256K x 16)/8-megabit (512K x 16)  
2.7V to 3.3V VCC  
70 ns Access Time  
Fully Static Operation and Tri-state Output  
1.2V (Min) Data Retention  
Industrial Temperature Range  
Flash Plane  
Not Recommended for  
New Designs. New  
Designs Should Use  
AT52BR3224(T)/3228(T)  
Device Number  
AT52BR3244  
AT52BR3244T  
AT52BR3248  
AT52BR3248T  
Flash Boot Location  
Architecture  
24M + 8M  
24M + 8M  
24M + 8M  
24M + 8M  
SRAM Configuration  
256K x 16  
Bottom  
Top  
256K x 16  
Bottom  
Top  
512K x 16  
512K x 16  
Rev. 2471E–STKD–10/02  

与AT52BR3244T-11CI相关器件

型号 品牌 获取价格 描述 数据表
AT52BR3244T-85CI MICROCHIP

获取价格

Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA66, 11 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH,
AT52BR3244T-90CI MICROCHIP

获取价格

Memory Circuit, 2MX16, CMOS, PBGA66
AT52BR3248-85CI MICROCHIP

获取价格

Memory Circuit, 2MX16, CMOS, PBGA66
AT52BR3248-90CI MICROCHIP

获取价格

Memory Circuit, 2MX16, CMOS, PBGA66
AT52BR3248T-85CI MICROCHIP

获取价格

Memory Circuit, 2MX16, CMOS, PBGA66
AT52BR3248T-90CI MICROCHIP

获取价格

Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA66, 11 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH,
AT52BR6408A ATMEL

获取价格

64-Mbit Flash, 8-Mbit SRAM (x16 I/O)
AT52BR6408A-70CI ATMEL

获取价格

64-Mbit Flash, 8-Mbit SRAM (x16 I/O)
AT52BR6408A-70CJ MICROCHIP

获取价格

Memory Circuit, 4MX16, PBGA66
AT52BR6408A-85CI ATMEL

获取价格

64-Mbit Flash, 8-Mbit SRAM (x16 I/O)