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AT52BR3244-85CI PDF预览

AT52BR3244-85CI

更新时间: 2024-02-21 16:51:08
品牌 Logo 应用领域
爱特美尔 - ATMEL 静态存储器内存集成电路
页数 文件大小 规格书
44页 325K
描述
Memory Circuit, Flash+SRAM, 2MX16, CMOS, PBGA66, 11 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, PLASTIC, CHIP SCALE, BGA-66

AT52BR3244-85CI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:BGA
包装说明:TFBGA, BGA66,8X12,32针数:66
Reach Compliance Code:compliantHTS代码:8542.32.00.71
风险等级:5.73最长访问时间:85 ns
其他特性:SRAM IS ORGANISED AS 256K X 16JESD-30 代码:R-PBGA-B66
JESD-609代码:e0长度:11 mm
内存密度:33554432 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16混合内存类型:FLASH+SRAM
功能数量:1端子数量:66
字数:2097152 words字数代码:2000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA66,8X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):240
电源:3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.000002 A
子类别:Other Memory ICs最大压摆率:0.04 mA
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:30宽度:8 mm
Base Number Matches:1

AT52BR3244-85CI 数据手册

 浏览型号AT52BR3244-85CI的Datasheet PDF文件第2页浏览型号AT52BR3244-85CI的Datasheet PDF文件第3页浏览型号AT52BR3244-85CI的Datasheet PDF文件第4页浏览型号AT52BR3244-85CI的Datasheet PDF文件第5页浏览型号AT52BR3244-85CI的Datasheet PDF文件第6页浏览型号AT52BR3244-85CI的Datasheet PDF文件第7页 
Features  
32-Mbit Flash and 4-Mbit/8-Mbit SRAM  
Single 66-ball 8 mm x 11 mm CBGA Package  
2.7V to 3.3V Operating Voltage  
Flash  
2.7V to 3.3V Read/Write  
Access Time – 85, 90, 110 ns  
Sector Erase Architecture  
– Sixty-three 32K Word (64K Byte) Sectors with Individual Write Lockout  
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout  
Fast Word Program Time – 20 µs  
32-megabit  
(2M x 16) Flash  
+ 4-megabit  
(256K x 16)/  
8-megabit  
(512K x 16)  
SRAM  
Stack Memory  
Fast Sector Erase Time – 200 ms  
Dual-plane Organization, Permitting Concurrent Read while Program/Erase  
Memory Plane A: Eight 4K Word and Fifteen 32K Word Sectors  
Memory Plane B: Forty-eight 32K Word Sectors  
Erase Suspend Capability  
– Supports Reading/Programming Data from Any Sector by Suspending Erase of  
Any Different Sector  
Low-power Operation  
– 25 mA Active  
– 10 µA Standby  
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection  
VPP Pin for Accelerated Program/Erase Operations  
RESET Input for Device Initialization  
Sector Lockdown Support  
Top or Bottom Boot Block Configuration Available  
128-bit Protection Register  
AT52BR3244  
AT52BR3244T  
AT52BR3248  
AT52BR3248T  
SRAM  
4-megabit (256K x 16)/8-megabit (512K x 16)  
2.7V to 3.3V VCC  
70 ns Access Time  
Fully Static Operation and Tri-state Output  
1.2V (Min) Data Retention  
Industrial Temperature Range  
Flash Plane  
Not Recommended for  
New Designs. New  
Designs Should Use  
AT52BR3224(T)/3228(T)  
Device Number  
AT52BR3244  
AT52BR3244T  
AT52BR3248  
AT52BR3248T  
Flash Boot Location  
Architecture  
24M + 8M  
24M + 8M  
24M + 8M  
24M + 8M  
SRAM Configuration  
256K x 16  
Bottom  
Top  
256K x 16  
Bottom  
Top  
512K x 16  
512K x 16  
Rev. 2471E–STKD–10/02  

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