5秒后页面跳转
AT52BC6402DT-70CU PDF预览

AT52BC6402DT-70CU

更新时间: 2024-02-03 03:17:15
品牌 Logo 应用领域
爱特美尔 - ATMEL ATM异步传输模式静态存储器内存集成电路
页数 文件大小 规格书
8页 619K
描述
Memory Circuit, 4MX16, CMOS, PBGA66, 10 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, GREEN, PLASTIC, CBGA-66

AT52BC6402DT-70CU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA,
针数:66Reach Compliance Code:unknown
HTS代码:8542.32.00.71风险等级:5.67
其他特性:PSRAM IS ORGANISED AS 1M X 16JESD-30 代码:R-PBGA-B66
长度:10 mm内存密度:67108864 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:16
功能数量:1端子数量:66
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-30 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.1 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM宽度:8 mm
Base Number Matches:1

AT52BC6402DT-70CU 数据手册

 浏览型号AT52BC6402DT-70CU的Datasheet PDF文件第2页浏览型号AT52BC6402DT-70CU的Datasheet PDF文件第3页浏览型号AT52BC6402DT-70CU的Datasheet PDF文件第4页浏览型号AT52BC6402DT-70CU的Datasheet PDF文件第5页浏览型号AT52BC6402DT-70CU的Datasheet PDF文件第6页浏览型号AT52BC6402DT-70CU的Datasheet PDF文件第7页 
Features  
64-Mbit Flash and 16-Mbit PSRAM  
Single 66-ball (8 mm x 10 mm x 1.2 mm) CBGA Package  
2.7V to 3.1V Operating Voltage  
Flash  
Single Voltage Read/Write Operation: 2.65V to 3.6V  
Access Time – 70 ns  
Sector Erase Architecture  
– One Hundred Twenty-seven 32K Word Sectors with Individual Write Lockout  
– Eight 4K Word Sectors with Individual Write Lockout  
Fast Word Program Time – 10 µs  
Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 100 ms  
Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming Data from Any Sector by Suspending Erase  
of a Different Sector  
– Supports Reading Any Word by Suspending Programming of Any Other Word  
Low-power Operation  
– 10 mA Active  
64-megabit  
Flash +  
16-megabit  
PSRAM  
Stack Memory  
– 15 µA Standby  
VPP Pin for Write Protection and Accelerated Program Operation  
WP Pin for Sector Protection  
RESET Input for Device Initialization  
Flexibel Sector Protection  
Top or Bottom Boot Block Configuration Available  
128-bit Protection Register  
AT52BC6402D  
AT52BC6402DT  
Minimum 100,000 Erase Cycles  
Common Flash Interface (CFI)  
Preliminary  
PSRAM  
16-megabit (1M x 16)  
2.7V to 3.1V VCC  
70 ns Access Time  
Flash Boot  
Location  
Flash Plane  
Configuration  
PSRAM  
Configuration  
Device Number  
AT52BC6402D  
AT52BC6402DT  
Bottom  
Top  
64M (4M x 16)  
64M (4M x 16)  
16M (1M x 16)  
16M (1M x 16)  
Flash & PSRAM Datasheets  
Datasheets  
PDF File  
64M Flash Memory: AT49BV640D(T)  
16M PSRAM: 2FHY64UD16161B  
AcrobaDocment  
Acrobat Document  
3619A–STKD–7/06  

与AT52BC6402DT-70CU相关器件

型号 品牌 获取价格 描述 数据表
AT52BR1662A ETC

获取价格

16M 2.7V 2MSRAM Single Bank Bottom Stacked Modules
AT52BR1662A-70CI ATMEL

获取价格

Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 10 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH,
AT52BR1662A-70CI MICROCHIP

获取价格

Memory Circuit, 1MX16, PBGA66
AT52BR1662A-90CI MICROCHIP

获取价格

Memory Circuit, 1MX16, PBGA66
AT52BR1662AT ETC

获取价格

16M 2.7V 2MSRAM Single Bank Top Stacked Modules
AT52BR1662AT-70CI MICROCHIP

获取价格

Memory Circuit, 1MX16, PBGA66
AT52BR1662AT-70CI ATMEL

获取价格

Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA66, 10 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH,
AT52BR1662AT-90CI MICROCHIP

获取价格

Memory Circuit, 1MX16, PBGA66
AT52BR1662T-70CI ETC

获取价格

MIXED MEMORY|SRAM+EEPROM|HYBRID|BGA|66PIN|PLASTIC
AT52BR1662T-90CI ETC

获取价格

MIXED MEMORY|SRAM+EEPROM|HYBRID|BGA|66PIN|PLASTIC