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AT52BR1662AT PDF预览

AT52BR1662AT

更新时间: 2024-09-24 23:32:51
品牌 Logo 应用领域
其他 - ETC 静态存储器
页数 文件大小 规格书
42页 335K
描述
16M 2.7V 2MSRAM Single Bank Top Stacked Modules

AT52BR1662AT 数据手册

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Features  
16-Mbit (x16) Flash and 2-megabit/4-megabit SRAM  
2.7V to 3.3V Operating Voltage  
Low Operating Power  
– 40 mA Operating Current (Maximum)  
– 35 µA Standby Current (Maximum)  
Industrial Temperature Range  
Flash  
2.7V to 3.3V Read/Write  
Access Time – 70 ns, 90 ns  
Sector Erase Architecture  
– Thirty-one 32K Word (64K Byte) Sectors with Individual Write Lockout  
– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout  
Fast Word Program Time – 12 µs  
16-megabit  
Flash +  
2-megabit/  
4-megabit  
SRAM Stack  
Memory  
Fast Sector Erase Time – 300 ms  
Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming from Any Sector by Suspending Erase of a  
Different Sector  
– Supports Reading Any Word by Suspending Programming of Any Other Word  
Low-power Operation  
– 12 mA Active  
– 13 µA Standby  
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection  
VPP Pin for Write Protection and Accelerated Program/Erase Operations  
RESET Input for Device Initialization  
Sector Lockdown Support  
Top/Bottom Boot Block Configuration  
128-bit Protection Register  
AT52BR1662A(T)  
AT52BR1664A(T)  
Minimum 100,000 Erase Cycles  
SRAM  
2-megabit (128K x 16)/4-megabit (256K x 16)  
2.7V to 3.3V VCC Operating Voltage  
70 ns Access Time  
Fully Static Operation and Tri-state Output  
1.2V (Min) Data Retention  
Device Number  
AT52BR1662A(T)  
AT52BR1664A(T)  
Flash Configuration  
16M (1M x 16)  
SRAM Configuration  
2M (128K x 16)  
16M (1M x 16)  
4M (256K x 16)  
Rev. 3361A–STKD–6/03  

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