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AT52BR1664A-70CJ PDF预览

AT52BR1664A-70CJ

更新时间: 2024-02-26 13:23:11
品牌 Logo 应用领域
美国微芯 - MICROCHIP 静态存储器内存集成电路
页数 文件大小 规格书
35页 495K
描述
Memory Circuit, 1MX16, CMOS, PBGA66

AT52BR1664A-70CJ 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:10 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PICTH, CBGA-66Reach Compliance Code:compliant
HTS代码:8542.32.00.71风险等级:5.61
其他特性:SRAM IS ORGANISED AS 256K X 16JESD-30 代码:R-PBGA-B66
JESD-609代码:e1长度:10 mm
内存密度:16777216 bit内存集成电路类型:MEMORY CIRCUIT
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:66
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN SILVER COPPER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
宽度:8 mmBase Number Matches:1

AT52BR1664A-70CJ 数据手册

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Features  
16-Mbit (x16) Flash and 4-megabit SRAM  
2.7V to 3.3V Operating Voltage  
Low Operating Power  
– 40 mA Operating Current (Maximum)  
– 35 µA Standby Current (Maximum)  
Industrial Temperature Range  
Flash  
16-megabit  
Flash +  
2.7V to 3.3V Read/Write  
Access Time – 70 ns, 90 ns  
Sector Erase Architecture  
4-megabit  
SRAM Stack  
Memory  
– Thirty-one 32K Word (64-Kbyte) Sectors with Individual Write Lockout  
– Eight 4K Word (8-Kbyte) Sectors with Individual Write Lockout  
Fast Word Program Time – 12 µs  
Suspend/Resume Feature for Erase and Program  
– Supports Reading and Programming from Any Sector by Suspending Erase of a  
Different Sector  
– Supports Reading Any Word by Suspending Programming of Any Other Word  
Low-power Operation  
AT52BR1664A  
AT52BR1664AT  
– 12 mA Active  
– 13 µA Standby  
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection  
VPP Pin for Write Protection and Accelerated Program/Erase Operations  
RESET Input for Device Initialization  
Sector Lockdown Support  
Not Recommended  
for New Designs.  
Top/Bottom Boot Block Configuration  
128-bit Protection Register  
Minimum 100,000 Erase Cycles  
SRAM  
4-megabit (256K x 16)  
2.7V to 3.3V VCC Operating Voltage  
70 ns Access Time  
Fully Static Operation and Tri-state Output  
1.2V (Min) Data Retention  
Device Number  
Flash Configuration  
16M (1M x 16)  
SRAM Configuration  
AT52BR1664A(T)  
4M (256K x 16)  
3361D–STKD–1/07  

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