Datasheet > AT49HBV010

AT49HBV010

更新时间： 2024-11-07 22:15:39

品牌	Logo	应用领域
爱特美尔 - ATMEL		闪存电池
页数	文件大小	规格书
11页	91K
描述
1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory

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中文翻译

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数据手册

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AT49HBV010 数据手册

AT49(H)BV/(H)LV01

Features

• Single Supply Voltage, Range 2.7V to 3.6V

• Single Supply for Read and Write

• Fast Read Access Time - 55 ns

• Internal Program Control and Timer

• 8K bytes Boot Block With Lockout

• Fast Erase Cycle Time - 10 seconds

• Byte By Byte Programming - 30 µs/Byte typical

• Hardware Data Protection

• DATA Polling For End Of Program Detection

• Low Power Dissipation

– 25 mA Active Current

– 50 µA CMOS Standby Current

• Typical 10,000 Write Cycles

1-Megabit

(128K x 8)

Single 2.7-volt

Battery-Voltage^™

Flash Memory

Description

The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memo-

ries organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced

nonvolatile CMOS technology, the devices offer access times to 55 ns with power dis-

sipation of just 90 mW over the commercial temperature range. When the devices are

deselected, the CMOS standby current is less than 50 µA.

To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not

require high input voltages for programming. Three-volt-only commands determine

the read and programming operation of the device. Reading data out of the device is

similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is

performed by erasing the entire 1 megabit of memory and then programming on a

byte by byte basis. The typical byte programming time is a fast 30 µs. The end of a

program cycle can be optionally detected by the DATA polling feature. Once the end

of a byte program cycle has been detected, a new access for a read or program can

begin. The typical number of program and erase cycles is in excess of 10,000 cycles.

AT49BV010

AT49HBV010

AT49LV010

AT49HLV010

(continued)

Pin Configurations

Pin Name

A0 - A16

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

I/O0 - I/O7

TSOP Top View

Type 1

PLCC Top View

A11

A10

A13

A14

VCC

A16

A15

A12

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

29 A14

28 A13

27 A8

26 A9

25 A11

24 OE

23 A10

22 CE

21 I/O7

A2 10

A1 11

A0 12

I/O0 13

0677B-A–9/97

12 3 4 5 6 7...11

中文翻译

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与AT49HBV010相关器件

型号	品牌	获取价格	描述	数据表
AT49HBV010-70JC	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HBV010-70JI	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HBV010-70TC	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HBV010-70TI	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HBV010-70VC	ETC	获取价格	x8 Flash EEPROM
AT49HBV010-70VI	ETC	获取价格	x8 Flash EEPROM
AT49HBV010-90JC	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HBV010-90JI	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HBV010-90TC	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HBV010-90TI	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory

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