Datasheet > AT49HBV010-70VI

AT49HBV010-70VI

更新时间： 2024-11-29 23:32:51

品牌	Logo	应用领域
其他 - ETC		闪存内存集成电路光电二极管异步传输模式 ATM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
14页	223K
描述
x8 Flash EEPROM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AT49HBV010-70VI 数据手册

Features

• Single Supply Voltage, Range 2.7V to 3.6V

• Single Supply for Read and Write

• Fast Read Access Time – 55 ns

• Internal Program Control and Timer

• 8K Bytes Boot Block With Lockout

• Fast Erase Cycle Time – 10 seconds

• Byte-by-byte Programming – 30 µs/Byte typical

• Hardware Data Protection

• DATA Polling for end of Program Detection

• Low Power Dissipation

1-megabit

(128K x 8)

– 25 mA Active Current

– 50 µA CMOS Standby Current

• Typical 10,000 Write Cycles

Single 2.7-volt

Battery-Voltage^™

Flash Memory

Description

The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memo-

ries organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced

nonvolatile CMOS technology, the devices offer access times to 55 ns with power dis-

sipation of just 90 mW over the commercial temperature range. When the devices are

deselected, the CMOS standby current is less than 50 µA.

To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not

require high input voltages for programming. Three-volt-only commands determine

the read and programming operation of the device. Reading data out of the device is

similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is per-

formed by erasing the entire 1 megabit of memory and then programming on a byte by

byte basis. The typical byte programming time is a fast 30 µs. The end of a program

cycle can be optionally detected by the DATA polling feature. Once the end of a byte

program cycle has been detected, a new access for a read or program can begin.

The typical number of program and erase cycles is in excess of 10,000 cycles.

AT49BV010

AT49HBV010

AT49LV010

AT49HLV010

(continued)

Pin Configurations

Pin Name

A0 - A16

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

VSOP Top View (8 x 14 mm) or

I/O0 - I/O7

TSOP Top View (8 x 20 mm)

Type 1

A11

PLCC Top View

A10

A13

A14

VCC

A16

A15

A12

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

29 A14

28 A13

27 A8

26 A9

25 A11

24 OE

23 A10

22 CE

21 I/O7

A2 10

A1 11

A0 12

I/O0 13

Rev. 0677E–11/99

12 3 4 5 6 7...14

中文翻译

下载PDF

与AT49HBV010-70VI相关器件

型号	品牌	获取价格	描述	数据表
AT49HBV010-90JC	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HBV010-90JI	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HBV010-90TC	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HBV010-90TI	ATMEL	获取价格	1-Megabit 128K x 8 Single 2.7-volt Battery-Voltage Flash Memory
AT49HBV010-90VC	ETC	获取价格	x8 Flash EEPROM
AT49HBV010-90VI	ATMEL	获取价格	Flash, 128KX8, 90ns, PDSO32, 14 X 8 MM, PLASTIC, VSOP-32
AT49HF010	ATMEL	获取价格	1-Megabit 128K x 8 5-volt Only CMOS Flash Memory
AT49HF010-12JC	ATMEL	获取价格	Flash, 128KX8, 120ns, PQCC32, PLASTIC, LCC-32
AT49HF010-12JI	ATMEL	获取价格	Flash, 128KX8, 120ns, PQCC32, PLASTIC, LCC-32
AT49HF010-12JJ	ATMEL	获取价格	Flash, 128KX8, 120ns, PQCC32, PLASTIC, LCC-32

与AT49HBV010-70VI相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

52
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

41
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

69
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

65

产品中心

服务支持

精选活动

关于我们

帮助中心

AT49HBV010-70VI

AT49HBV010-70VI 数据手册

与AT49HBV010-70VI相关器件

与AT49HBV010-70VI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AT49HBV010-70VI

AT49HBV010-70VI 数据手册

与AT49HBV010-70VI相关器件

与AT49HBV010-70VI相关文章

您还可以找

您在本页遇到什么问题？