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AT49HBV010-90VI PDF预览

AT49HBV010-90VI

更新时间: 2024-11-30 20:30:43
品牌 Logo 应用领域
爱特美尔 - ATMEL ATM异步传输模式光电二极管内存集成电路
页数 文件大小 规格书
14页 130K
描述
Flash, 128KX8, 90ns, PDSO32, 14 X 8 MM, PLASTIC, VSOP-32

AT49HBV010-90VI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:14 X 8 MM, PLASTIC, VSOP-32
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.92Is Samacsys:N
最长访问时间:90 ns启动块:BOTTOM
命令用户界面:YES数据轮询:YES
JESD-30 代码:R-PDSO-G32JESD-609代码:e0
长度:12.4 mm内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1,1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP32,.56,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:PARALLEL电源:3/3.3 V
编程电压:2.7 V认证状态:Not Qualified
座面最大高度:1.2 mm部门规模:8K,120K
最大待机电流:0.00005 A子类别:Flash Memories
最大压摆率:0.05 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

AT49HBV010-90VI 数据手册

 浏览型号AT49HBV010-90VI的Datasheet PDF文件第2页浏览型号AT49HBV010-90VI的Datasheet PDF文件第3页浏览型号AT49HBV010-90VI的Datasheet PDF文件第4页浏览型号AT49HBV010-90VI的Datasheet PDF文件第5页浏览型号AT49HBV010-90VI的Datasheet PDF文件第6页浏览型号AT49HBV010-90VI的Datasheet PDF文件第7页 
Features  
Single Supply Voltage, Range 2.7V to 3.6V  
Single Supply for Read and Write  
Fast Read Access Time – 55 ns  
Internal Program Control and Timer  
8K Bytes Boot Block With Lockout  
Fast Erase Cycle Time – 10 seconds  
Byte-by-byte Programming 30 µs/Byte typical  
Hardware Data Protection  
DATA Polling for end of Program Detection  
Low Power Dissipation  
1-megabit  
(128K x 8)  
25 mA Active Current  
50 µA CMOS Standby Current  
Typical 10,000 Write Cycles  
Single 2.7-volt  
Battery-Voltage™  
Flash Memory  
Description  
The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memo-  
ries organized as 131,072 words of 8 bits each. Manufactured with Atmels advanced  
nonvolatile CMOS technology, the devices offer access times to 55 ns with power dis-  
sipation of just 90 mW over the commercial temperature range. When the devices are  
deselected, the CMOS standby current is less than 50 µA.  
To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not  
require high input voltages for programming. Three-volt-only commands determine  
the read and programming operation of the device. Reading data out of the device is  
similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is per-  
formed by erasing the entire 1 megabit of memory and then programming on a byte by  
byte basis. The typical byte programming time is a fast 30 µs. The end of a program  
cycle can be optionally detected by the DATA polling feature. Once the end of a byte  
program cycle has been detected, a new access for a read or program can begin.  
The typical number of program and erase cycles is in excess of 10,000 cycles.  
AT49BV010  
AT49HBV010  
AT49LV010  
AT49HLV010  
(continued)  
Pin Configurations  
Pin Name  
A0 - A16  
CE  
Function  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
OE  
WE  
VSOP Top View (8 x 14 mm) or  
I/O0 - I/O7  
NC  
TSOP Top View (8 x 20 mm)  
Type 1  
A11  
A9  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
PLCC Top View  
2
A10  
CE  
A8  
3
A13  
A14  
NC  
WE  
VCC  
NC  
A16  
A15  
A12  
A7  
4
I/O7  
I/O6  
I/O5  
I/O4  
I/O3  
GND  
I/O2  
I/O1  
I/O0  
A0  
5
A7  
A6  
A5  
A4  
A3  
5
6
7
8
9
29 A14  
28 A13  
27 A8  
26 A9  
25 A11  
24 OE  
23 A10  
22 CE  
21 I/O7  
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
A2 10  
A1 11  
A0 12  
I/O0 13  
A6  
A1  
A5  
A2  
Rev. 0677E11/99  
A4  
A3  

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