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AT49HF010-45TJ PDF预览

AT49HF010-45TJ

更新时间: 2024-09-21 13:05:43
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存存储内存集成电路异步传输模式ATM
页数 文件大小 规格书
10页 251K
描述
暂无描述

AT49HF010-45TJ 数据手册

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Features  
Single Voltage Operation  
- 5V Read  
- 5V Reprogramming  
Fast Read Access Time - 45 ns  
Internal Program Control and Timer  
8K bytes Boot Block With Lockout  
Fast Erase Cycle Time - 10 seconds  
Byte By Byte Programming - 10 µs/Byte  
Hardware Data Protection  
DATA Polling For End Of Program Detection  
Low Power Dissipation  
1-Megabit  
(128K x 8)  
5-volt Only  
CMOS Flash  
Memory  
- 30 mA Active Current  
- 100 µA CMOS Standby Current  
Typical 10,000 Write Cycles  
Description  
The AT49F010/HF010 are 5-volt-only in-system programmable and erasable Flash  
Memories. Their 1-megabit of memory is organized as 131,072 words by 8 bits. Manu-  
factured with Atmel’s advanced nonvolatile CMOS technology, the devices offer ac-  
cess times to 45 ns (HF version) with a power dissipation of just 165 mW over the  
commercial temperature range. When the device is deselected, the CMOS standby  
current is less than 100 µA.  
AT49F010  
AT49HF010  
To allow for simple in-system reprogrammability, the AT49F010/HF010 does not re-  
quire high input voltages for programming. Five-volt-only commands determine the  
read and programming operation of the device. Reading data out of the device is  
similar to reading from an EPROM. Reprogramming the AT49F010/HF010 is per-  
formed by erasing the entire 1 megabit of memory and then programming on a byte  
by byte basis. The byte programming time is a fast 50 µs. The end of a program cycle  
can be optionally detected by the DATA polling feature. Once the end of a byte pro-  
AT49F010/HF010  
(continued)  
DIP Top View  
Pin Configurations  
Pin Name Function  
A0 - A16  
CE  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
OE  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
NC  
No Connect  
PLCC Top View  
TSOP Top View  
Type 1  
0852AX–5/97  

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